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EFFECT OF FLUORINE CHEMISTRY IN THE REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON FILMS FROM Si2H6-SiF4-H2
Korean Journal of Chemical Engineering, November 1995, 12(5), 572-575(4), 10.1007/BF02705862
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Abstract
SiF4 was added into Si2H6-H2 to deposit polycrystalline silicon films at low temperatures around 400℃ in a remote plasma enhanced chemical vapor deposition reactor. It was found out that the fluorine chemistry obtained from SiF4 addition had an influence on the chemical composition, crystallinity, and silicon dangling bond density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorporated into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effect of SiF4 concentration as well as the deposition temperature was also significant.
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References
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Hanna J, Kamo A, Komiya T, Shimizu I, Kokado H, J. Non-Cryst. Solids, 114, 172 (1989)
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Nagamine K, Yamada A, Konagai M, Takahashi M, Jpn. J. Appl. Phys., 26, L951 (1986)
Nagahara T, Fujimoto K, Kohno N, Kashiwagi Y, Kakinoki H, Jpn. J. Appl. Phys., 31, 4555 (1992)
Nakayama Y, Takuma Y, Akiyama K, Otsuchi T, Kawamura T, Jpn. J. Appl. Phys., 23(7), L470 (1984)
Nishida S, Shiimoto T, Yamada A, Karasawa S, Konagai M, Takahashi K, Appl. Phys. Lett., 49, 79 (1986)
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S, J. Non-Cryst. Solids, 114, 816 (1989)
Shimada T, Katayama Y, Horigome S, Jpn. J. Appl. Phys., 19, L265 (1980)
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Toyoshima Y, Arai K, Matsuda A, Tanaka K, Appl. Phys. Lett., 56(16), 1540 (1990)
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Zanzucchi PJ, "Semiconductors and Semimetals, ed., Pankove, J. (Academic Press, New York), Vol. 21B, p. 113 (1984)
