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REMOVAL OF ORGANIC IMPURITIES FROM THE SILICON SURFACE BY OXYGEN AND UV CLEANING
Korean Journal of Chemical Engineering, May 1996, 13(3), 328-330(3), 10.1007/BF02705958
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Abstract
We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decom-position of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.
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Chabal YJ, Raghavachari K, Phys. Rev. Lett., 53, 282 (1984)
Chabal YJ, Raghavachari K, Phys. Rev. Lett., 54, 1055 (1985)
Kern W, Poutein DA, RCA Rev., 31, 187 (1970)
Okada C, kobayashi H, Takahashi I, Ryuta J, Shingyouji T, Jpn. J. Appl. Phys., 32(8A), L1031 (1993)
Ruzyllo J, Duranko GT, Hoff AM, J. Electrochem. Soc., 134(8), 2052 (1987)
Wood PC, Wydeven T, Tsuji O, Mater. Res. Soc. Symp. Proceed., 315, 237 (1993)
Yonekawa N, Yasui S, Ohmi T, "Cleaning Technology and Analysis Technology for Hydrocarbon Contamination on Si Wafer Surface," Extend Abstracts of the 1994 International Conference on Solid State Device and Materials, 428 (1994)
