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Infrared Spectroscopic Study and Characteristics of SnO2-Based Thick Film for CH3CN Detection
Korean Journal of Chemical Engineering, November 1997, 14(6), 469-473(5), 10.1007/BF02706594
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Abstract
The SnO2/Al2O3/Nb2O5/SiO2 thick film devices were fabricated by screen printing and dipping methods, and their sensing characteristics to CH3CN gas was investigated. The oxidation products of CH3CN on the thick film were analyzed by FT-IR using a heatable gas cell. The IR results showed that the products formed by oxidation of CH3CN at 300℃ on the SnO2/Al2O3/Nb2O5 thick film without SiO2 were mainly CO2, H2O, and NH3, while on the SnO2/Al2O3/Nb2O5/SiO2 thick film products such as CO2, H2O, N2O, HNO3, and HNO2 were observed. The thick film devices containing SiO2 showed high selectivity and negative sensitivity to CH3CN due to the presence of nitrogen compounds produced by oxidation of CH3CN. Optimum amount of Nb2O5 and operating temperature were 1.0 wt% and 300℃, respectively.
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References
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