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Crystalline Structure of YSZ Thin Films Deposited on Si((111) Substrate by Chemical Vapor Deposition

Hwang SC Lee HG Shin HS

Korean Journal of Chemical Engineering, May 1998, 15(3), 243-245(3), 10.1007/BF02707078

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Abstract

Yttria-stabilized zirconic (YSZ) thin films were formed on Si(111) substrate by chemical vapor deposition (CVD) in a temperature range of 650-800℃ using β-diketone metal chelates. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) data evidenced that YSZ thin fnms have a smooth surface with fine grains and crystalline structure, respectively. The crystalline structure of YSZ films was affected by the deposition temperature. The X-ray photoelectron spectroscopy (XPS) data indicated that the YSZ film grows thick enough to prevent the diffusion of Si.

Keywords

YSZ Thin Film Si Substrate CVD XPS XRD

References

Chatterjee R, Fukutomi M, Aoki S, Togano K, Maeda H, Appl. Phys. Lett., 65, 109 (1994)
Hashimoto T, Fueki K, Kishi A, Azumi T, Koinuma H, Jpn. J. Appl. Phys., 27, L214 (1988)
Iijima Y, Tanabe N, Kohno O, Ikeno Y, Appl. Phys. Lett., 60, 769 (1992)
Komatsu T, Tanaka O, Matusita K, Takata M, Yamashita T, Jpn. J. Appl. Phys., 27, L1025 (1988)
Reade RP, Berdahl P, Russo RE, Garrison SM, Appl. Phys. Lett., 61, 2231 (1992)
Shin HS, Cho IJ, Park JS, Yang SW, Lee HG, Won DY, HWAHAK KONGHAK, 31(2), 131 (1993)