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Characteristics of Aluminum Films Prepared by Metalorganic Chemical Vapor Deposition Using Diemthylethylamine Alane on the Plasma-Pretreated TiN Surfaces
Faculty of Applied Chemical Engineering and Research Institute for Catalysis, College of Engineering, Chonnam National University, 300 Yongbong-dong, Buk-Ku, Kwang-Ju 500-757, Korea 1Central Research Laboratory, Hyundai Microelectronics Co., Ltd., 50 HayangJeong-Dong, CheongJu-Si 360-480, Korea
kdhh@chonnam.chonnam.ac.kr
Korean Journal of Chemical Engineering, July 2000, 17(4), 449-454(6), 10.1007/BF02706859
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Abstract
Aluminum films were prepared on H2-plasma pretreated TiN substrates at deposition temperatures of 60-250℃ by metallorganic chemical vapor deposition using dimethylethylamine alane as a precursor. The films were highly pure and the growth rates were 3-50 mm/min, where the lowest deposition temperature was 60℃. The resistivity was as low as 2.8μΩcm. High substrate temperatures tended to favor a low resistivity and smooth surface morphology of the films, compared to films with a low temperature at a given thickness. Numerous empty pores appeared in the Al films deposited at a temperature below 150℃ when the film thickness exceeded 20 nm. The number of these pores tended to increase with decrease in temperature. However, in films deposited at temperatures above 200℃, there were no pores and the large grains were interconnceted to a high degree. Higher deposition temperatures yielded a greater preference of the (111) orientation of Al films.
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