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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received June 26, 2000
Accepted November 3, 2000

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Preparation of Ferroelectric Pb(Zr-0.52 Ti-0.48)O-3 Thin Films by Sol-Gel Processing

Kyung Won Seo^† Sung Hyun Cho Seung Ho Lee¹

School of Chemical Engineering & Biotechnology, Ajou Univ., Suwon 442-749, Korea ¹Korea Institute of Ceramic Engineering and Technology, Seoul 153-023, Korea

kwseoi@madang.ajou.ac.kr

Korean Journal of Chemical Engineering, January 2001, 18(1), 75-80(6), 10.1007/BF02707201

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Abstract

Ferroelectric Pb(Zr(0.52)Ti(0.48))O-3 thin films were prepared by sol-gel processing on the Pt/Ti/SiO2/Si(100) substrates. Effects of the concentration (0.2-0.8 M) of the starting solution (Pb/Zr/Ti=1.1/0.52/0.48) and the sintering temperature (500-700 ℃) on crystallinity, microstructure and electrical properties of PZT thin films were investigated. For the thin film prepared at 0.4 M starting solution, the highest crystallinity appeared at a sintering temperature of 650 ℃. The average grain size of the PZT thin films was about 0.17 μm. The film thickness was about 0.2 mum. The relative dielectric constant and the dissipation factor of the film measured at 1 kHz were about 750 and 4.3%, respectively. The remnant polarization (Pr) and coercive field (Ec) of the film measured at the applied voltage of 5 V were about 49 μC/cm(2) and 134 kV/cm, respectively.

Keywords

Ferroelectric Thin Films Sol-Gel Processing PZT Perovskite Phase Relative Dielectric Constant Dissipation Factor

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