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Received December 11, 2000
Accepted February 10, 2001
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Evaluation of Citric Acid Added Cleaning Solution for Removal of Metallic Contaminants on Si Wafer Surface
R&D Center, LG Siltron Inc., 283, Imsoo-dong, Kumi, Kyungbuk 730-350, Korea 1Department of Chemistry, Kyungpook National University, 1370 Sankyuk-dong,Puk-gu, Daegu 702-701, Korea
Korean Journal of Chemical Engineering, May 2001, 18(3), 342-346(5), 10.1007/BF02699175
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Abstract
We have investigated cleaning solutions based on citric acid (CA) to remove metallic contaminants from the silicon wafer surface. Silicon wafers were intentionally contaminated with Fe, Ca, Zn, Na, Al and Cu standard solution by spin coating method and cleaned in various CA-added cleaning solutions. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). And the surface micro-roughness was also measured by atomic force microscopy (AFM) to evaluate the effect of cleaning solutions. It was found that acidic CA/H2O solution has the ability to remove metallic contaminants from silicon surfaces. Fe, Ca, Zn and Na on silicon surface were decreased from the order of 10(12) atoms/cm(2) to the order of 10(9) atoms/cm(2) even at low CA concentration, low temperature of CA solution and with short immersion time. CA was also effective in alkali cleaning solution. Fe, Ca, Zn, Na and Cu were reduced down to the order of 10(9) atoms/cm(2) in CA added with NH4OH/H2O2/H2O solution without degradation of surface micro-roughness.
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Shiramizu Y, Watanabe K, Tanaka M, Aoki H, Kitajima H, J. Electrochem. Soc., 143(5), 1632 (1996)
Hall LH, Sees JA, Schmidt BL, Surf. Interface Anal., 24, 511 (1996)
Hourai M, Naridomi T, Oka Y, Murakami K, Sumita S, Fujino N, Shirawa T, Jpn. J. Appl. Phys., 12(L), 2361 (1988)
Kern W, "Handbook of Semiconductor Wafer Cleaning Technology," Noyes Publications, New Jersey (1992)
Kern W, J. Electrochem. Soc., 137, 1887 (1990)
Kim CK, Chung CH, Moon SH, Korean J. Chem. Eng., 13(3), 328 (1996)
Loewenstein LM, Mertens PW, J. Electrochem. Soc., 146(10), 3886 (1999)
Mertens PW, Loewentein LM, Vos R, De Gendt S, Bearda T, Heyns MM, "Wafer Cleaning: A Quanifiable Process Step," The Electrochemical Society Proceedings Series, PV 98-1, 592 (1998)
Mori Y, Uemura K, Shimanoe K, J. Electrochem. Soc., 142(9), 3104 (1995)
Morinaga H, Ohmi T, "Electrochemical Deposition and Removal of Metallic Impurities on Si Substrates," The Electrochemical Society Proceedings Series, PV 95-20, 257 (1995)
Morinaga H, Aoki M, Maeda T, Fujisue M, Tanaka H, Toyoda M, "Advanced Alkali Cleaning for Simplification of Semiconductor Cleaning Process," Proceeding of Material Research Society 1997 Spring Meetings, Symporium P(The Science and Technology of Semiconductor Surface Preparation), 35 (1997)
Morita H, Joo JD, Messoussi R, Kawada K, Kim JS, Ohmi T, "Passivation of Cu Particles on Si Substrate by FOM(HF+O3-UPW) Solution," The Electrochemical Society Proceedings Series, PV 97-35, 147 (1995)
Mouche L, Tardif F, Derrien J, J. Electrochem. Soc., 142(7), 2395 (1995)
Ohmi T, Imaoka T, Kezuka T, Takano J, Kogure M, J. Electrochem. Soc., 140, 811 (1993)
Ohmi T, J. Electrochem. Soc., 143(9), 2957 (1996)
Ridley RS, Grebs T, Trost J, Webb R, Schuler M, Longenberger RF, Fenstemacher T, Caravaggio M, "Advanced Aqueous Wafer Cleaning in Power Semiconductor Device Manufacturing," 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 235 (1998)
Shiramizu Y, Watanabe K, Tanaka M, Aoki H, Kitajima H, J. Electrochem. Soc., 143(5), 1632 (1996)
