Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received March 8, 2001
Accepted June 8, 2001
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
The Effects of Cu-doping in V2O5 Thin Film Cathode for Microbattery
Sang Cheol Nam†
Young Chang Lim
Ho Young Park
Eun Jeong Jeon1
Young Soo Yoon1
Won Il Cho
Byung Won Cho
Kyung Suk Yun
Battery and Fuel Cell Research Center, Korea Institute of Science and Technology, P.O.Box 131,Cheongryang, Seoul 130-650, Korea 1Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O.Box 131,Cheongryang, Seoul 130-650, Korea
scnam@kist.re.kr
Korean Journal of Chemical Engineering, September 2001, 18(5), 673-678(6), 10.1007/BF02706385
Download PDF
Abstract
Copper-doped vanadium oxide (CuxV2O5) thin film cathode materials for a thin film microbattery have been prepared by DC reactive magnetron co-sputtering with O2/Ar ratio of 10/90 and compared with pure V2O5 thin film. The film structures have been characterized by x-ray diffraction analysis, transmission electron microscopy, Auger electron spectroscopy and X-ray photoelectron spectroscopy. X-ray diffraction and TEM studies show that the Cu(x)V2O5 film was amorphous and phenomenal behavior of copper present in thin film with substrate has been explained by thermodynamical model. Copper doping helps to increase the thickness of the film more than 1 micrometer resulting increase of total capacity. Cycling behavior of the Cu(x)V2O5/Lipon/Li configuration cell system was beyond 500 cycles with average capacity of 50 mAh/cm(2)-μm, which is higher than the pure V2O5 thin film system.
References
Andrukaitis E, J. Power Sources, 68(2), 656 (1997)
Baba M, Kumagai N, Kobayashi H, Nakano O, Nishidate K, Electrochemical Solid-State Letters, 2, 320 (1999)
Bates JB, Gruzalski GR, Dudney NJ, Luck CF, Yu XH, Jones SD, Solid State Technol., 36, 59 (1993)
Burton JJ, Hyman E, Fedak DG, J. Catal., 37, 106 (1975)
Coustier F, Hill J, Owens BB, Passerini S, Smyrl WH, J. Electrochem. Soc., 146(4), 1355 (1999)
Coustier F, Jarero G, Passerini S, Smyrl WH, J. Power Sources, 83(1-2), 9 (1999)
Coustier F, Passerini S, Smyrl WH, Solid State Ion., 100(3-4), 247 (1997)
Jeon EJ, Shin YW, Nam SC, Cho WI, Yoon YS, J. Korean Institute Electrical Electronic Mat. Eng., 12, 1019 (1999)
Jeon EJ, Yoon YS, Nam SC, Cho WI, Shin YW, J. Korean Electrochem. Soc., 3, 115 (2000)
Le DB, Passerini S, Guo J, Ressler J, Owens BB, Smyrl WH, J. Electrochem. Soc., 143(7), 2099 (1996)
Le DB, Passerini S, Tipton AL, Owens BB, Smyrl WH, J. Electrochem. Soc., 142(6), L102 (1995)
Lim YC, Nam SC, Jeon EJ, Yoon YS, Cho WI, Cho BW, Chun HS, Yun KS, J. Korean Electrochem. Soc., 3, 44 (2000)
McGraw JM, Bahn CS, Parilla PA, Perkins JD, Readey DW, Ginley DS, Electrochim. Acta, 45(1-2), 187 (1999)
McGraw JM, Perkins JD, Zhang JG, Liu P, Parilla PA, Turner J, Schulz DL, Curtis CJ, Ginley DS, Solid State Ion., 113-115, 407 (1998)
Miyazaki H, Sakamura H, Kamei M, Yasui I, Solid State Ion., 122(1-4), 223 (1999)
Overbury SH, Bertrand PA, Somorjai GA, Chem. Rev., 75, 547 (1975)
Passerini S, Le DB, Smyrl WH, Berrettoni M, Tossici R, Marassi R, Giorgetti M, Solid State Ion., 104(3-4), 195 (1997)
Shimizu A, Tsumura T, Inagaki M, Solid State Ion., 63-65, 479 (1993)
Takeda Y, Itoh K, Kanno R, Ichikawa T, Imanishi N, Yamamoto O, J. Electrochem. Soc., 138, 2566 (1991)
Wen CJ, Boukamp BA, Huggins RA, Weppner W, J. Electrochem. Soc., 126, 2258 (1979)
West K, Zachau-Christiansen B, Jacobsen T, J. Power Sources, 43-44, 127 (1993)
Yu XH, Bates JB, Jellison GE, Hart FX, J. Electrochem. Soc., 144(2), 524 (1997)
Baba M, Kumagai N, Kobayashi H, Nakano O, Nishidate K, Electrochemical Solid-State Letters, 2, 320 (1999)
Bates JB, Gruzalski GR, Dudney NJ, Luck CF, Yu XH, Jones SD, Solid State Technol., 36, 59 (1993)
Burton JJ, Hyman E, Fedak DG, J. Catal., 37, 106 (1975)
Coustier F, Hill J, Owens BB, Passerini S, Smyrl WH, J. Electrochem. Soc., 146(4), 1355 (1999)
Coustier F, Jarero G, Passerini S, Smyrl WH, J. Power Sources, 83(1-2), 9 (1999)
Coustier F, Passerini S, Smyrl WH, Solid State Ion., 100(3-4), 247 (1997)
Jeon EJ, Shin YW, Nam SC, Cho WI, Yoon YS, J. Korean Institute Electrical Electronic Mat. Eng., 12, 1019 (1999)
Jeon EJ, Yoon YS, Nam SC, Cho WI, Shin YW, J. Korean Electrochem. Soc., 3, 115 (2000)
Le DB, Passerini S, Guo J, Ressler J, Owens BB, Smyrl WH, J. Electrochem. Soc., 143(7), 2099 (1996)
Le DB, Passerini S, Tipton AL, Owens BB, Smyrl WH, J. Electrochem. Soc., 142(6), L102 (1995)
Lim YC, Nam SC, Jeon EJ, Yoon YS, Cho WI, Cho BW, Chun HS, Yun KS, J. Korean Electrochem. Soc., 3, 44 (2000)
McGraw JM, Bahn CS, Parilla PA, Perkins JD, Readey DW, Ginley DS, Electrochim. Acta, 45(1-2), 187 (1999)
McGraw JM, Perkins JD, Zhang JG, Liu P, Parilla PA, Turner J, Schulz DL, Curtis CJ, Ginley DS, Solid State Ion., 113-115, 407 (1998)
Miyazaki H, Sakamura H, Kamei M, Yasui I, Solid State Ion., 122(1-4), 223 (1999)
Overbury SH, Bertrand PA, Somorjai GA, Chem. Rev., 75, 547 (1975)
Passerini S, Le DB, Smyrl WH, Berrettoni M, Tossici R, Marassi R, Giorgetti M, Solid State Ion., 104(3-4), 195 (1997)
Shimizu A, Tsumura T, Inagaki M, Solid State Ion., 63-65, 479 (1993)
Takeda Y, Itoh K, Kanno R, Ichikawa T, Imanishi N, Yamamoto O, J. Electrochem. Soc., 138, 2566 (1991)
Wen CJ, Boukamp BA, Huggins RA, Weppner W, J. Electrochem. Soc., 126, 2258 (1979)
West K, Zachau-Christiansen B, Jacobsen T, J. Power Sources, 43-44, 127 (1993)
Yu XH, Bates JB, Jellison GE, Hart FX, J. Electrochem. Soc., 144(2), 524 (1997)
