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In relation to this article, we declare that there is no conflict of interest.
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Received August 30, 2001
Accepted October 15, 2001
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Correlations among Defect Type, Photoconductivity and Photoreactivity of Doped TiO2

Deparment of Ceramics Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyungnam 641-773, Korea 1School of Environmental Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea 2School of Material Science and Engineering, Seoul National University, Seoul 151-742, Korea 3School of mechatronics, Changwon National University, 9 Sarim-Dong, Changwon, Gyungnam 641-773, Korea
mjkim@sarim.changwon.ac.kr
Korean Journal of Chemical Engineering, November 2001, 18(6), 873-878(6), 10.1007/BF02705611
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Abstract

The electrical conductivity (σ), photoconductivity and photocatalytic reactivity in doped crystalline TiO2 were measured as a function of the oxygen partial pressure (Po2), temperature, doping type and UV irradiation. The Po, dependence of σ suggests that the predominant atomic defects in pure TiO2 are oxygen vacancies (V(o)..) and interstitial titanium ions (Ti(i)...), but the dominant defect is changed with Po2 and temperature. The photoexcited electrons in reduced and/or n-type doped TiO2 enhance both the photoconductivity and the photocatalytic reactivity by the reduction process. Therefore, these behaviors are strongly dependent on the electron concentration.

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