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In relation to this article, we declare that there is no conflict of interest.
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Received August 23, 2023
Accepted August 23, 2023
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Applications of Atomic Layer Chemical Vapor Deposition for the Processing of Nanolaminate Structures

Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
Korean Journal of Chemical Engineering, May 2002, 19(3), 451-462(12), 10.1007/BF02697156
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Abstract

Atomic layer chemical vapor deposition (ALCVD) is a variant of a CVD process that involves surface deposition for the controlled growth of nano-thickness films. ALCVD is based on the self-limiting surface reaction with less than a monolayer chemisorption of chemical precursors. Advantages of the ALCVD process are uniform film growth on large area substrate, easy control of composition in atomic level, low growth temperature, multi-layer thin film growth with various composition, and wide process window. Since initially developed by Suntola in 1977, ALCVD has been used for the growth of various materials, including oxides, nitrides, metals, elements, and compound semiconductors. This article reviews the basic principle, mechanism, characteristics, and applications of ALCVD.

References

Aarik J, Aidla A, Kiisler AA, Uustare T, Sammelselg V, Thin Solid Films, 305(1-2), 270 (1997) 
Aarik J, Aidla A, Kiisler AA, Uustare T, Sammelselg V, Thin Solid Films, 340(1-2), 110 (1999) 
Aarik J, Aidla A, Mandar M, Uustare T, Kukli K, Schuisky M, Appl. Surf. Sci., 173, 15 (2001) 
Aarik J, aidla A, Mandar H, Uustare T, Appl. Surf. Sci., 172, 148 (2001) 
Aarik J, Aidla A, Sammelselg V, Uustare T, J. Cryst. Growth, 169, 496 (1996) 
Aarik J, Aidla A, Sammelselg V, Uustare T, J. Cryst. Growth, 181, 259 (1997) 
Aarik J, Aidla A, Uustare T, Sammelselg V, J. Cryst. Growth, 148, 268 (1995) 
Aarik J, Kukli K, Aidla A, Pung L, Appl. Surf. Sci., 103, 331 (1996) 
Ares R, Tran CA, Watkins SP, Appl. Phys. Lett., 67, 1576 (1995) 
Asikainen T, Ritala M, Leskela M, J. Electrochem. Soc., 141(11), 3210 (1994) 
Asikainen T, Ritala M, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Appl. Surf. Sci., 99, 91 (1996) 
Asikainen T, Ritala M, Li WM, Lappalainen R, Leskela M, Appl. Surf. Sci., 112, 231 (1997) 
Canava B, Guillemoles JF, Yousfi EB, Cowache P, Kerber H, Loeffl A, Schock HW, Powalla M, Hariskos D, Lincot D, Thin Solid Films, 361-362, 187 (2000) 
Chang KM, Deng IC, Yeh TH, Lain KD, Fu CM, Jpn. J. Appl. Phys., 38, 1343 (1999) 
Cho SI, Chung CH, Moon SH, J. Electrochem. Soc., 148(9), C599 (2001) 
Chung CW, Kim D, Korean J. Chem. Eng., 14(2), 136 (1997)
Elam JW, Nelson CE, Grubbs RK, George SM, Thin Solid Films, 386(1), 41 (2001) 
Ericsson P, Bengtsson S, Skarp J, Microelectronic Eng., 36, 91 (1997) 
George SM, Ott AW, Klaus JW, J. Phys. Chem., 100(31), 13121 (1996) 
Gordon RG, Becker J, Hausmann D, Suh S, Chem. Mater., 13, 2463 (2001) 
Haukka S, Suntola T, Interface Sci., 5, 119 (1997) 
Jeon H, Lee JW, Kim YD, Kim DS, Yi KS, J. Vac. Sci. Technol. A, 18(4), 1595 (2000) 
Jeong CW, Lee JS, Joo SK, Jpn. J. Appl. Phys., 40, 285 (2001) 
Juppo M, Rahtu A, Ritala M, Leskela M, Langmuir, 16(8), 4034 (2000) 
Juppo M, Ritala M, Leskela M, J. Vac. Sci. Technol. A, 15(4), 2330 (1997) 
Juppo M, Ritala M, Leskela M, J. Electrochem. Soc., 147(9), 3377 (2000) 
Kaiya K, Yoshii N, Omichi K, Takahashi N, Nakamura T, Okamoto S, Yamamoto H, Chem. Mater., 13, 1952 (2001)
Katrelus H, Ylilammi M, Saarilahti J, Antson J, Lindfors S, Thin Solid Films, 225, 296 (1993) 
Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ, J. Vac. Sci. Technol. A, 13(4), 1819 (1995) 
Kim DJ, Jung YB, Lee MB, Lee YH, Lee JH, Lee JH, Thin Solid Films, 372(1-2), 276 (2000) 
Kim JW, Kim DO, Hahn YB, Korean J. Chem. Eng., 15(2), 217 (1998)
Kim SW, Kwon OY, Korean J. Chem. Eng., 16(1), 40 (1999)
Kim Y, Lee SM, Park CS, Lee SI, Lee MY, Appl. Phys. Lett., 71, 3604 (1997) 
Klaus JW, Ott AW, Johnson JM, George SM, Appl. Phys. Lett., 70, 1092 (1997) 
Klaus JW, Ferro SJ, George SM, Appl. Surf. Sci., 162-163, 479 (2000) 
Klaus JW, Ferro SJ, George SM, J. Electrochem. Soc., 147(3), 1175 (2000) 
Koukitu A, Takahashi N, Seki H, J. Cryst. Growth, 163, 180 (1996) 
Kukli K, Aarik J, Aidla A, Kohan O, Uustare T, Sammelselg V, Thin Solid Films, 260(2), 135 (1995) 
Kukli K, Aarik J, Aidla A, Siimon H, Ritala M, Leskela M, Appl. Surf. Sci., 112, 236 (1997) 
Kukli K, Aidla A, Aarik J, Schuisky M, Harsta A, Ritala M, Leskela M, Langmuir, 16(21), 8122 (2000) 
Kukli K, Ihanus J, Ritala M, Leskela M, Appl. Phys. Lett., 68, 3737 (1996) 
Kukli K, Ritala M, Leskela M, Chem. Mater., 12, 1914 (2000) 
Kukli K, Ritala M, Leskela M, Jokinen J, J. Vac. Sci. Technol. A, 15(4), 2214 (1997) 
Kukli K, Ritala M, Leskela M, J. Electrochem. Soc., 142(5), 1670 (1995) 
Kukli K, Ritala M, Leskela M, J. Electrochem. Soc., 148(2), F35 (2001) 
Kukli K,Ritala M, Leskela M, J. Appl. Phys., 86, 5656 (1999) 
Kukli K, Ritala M, Leskela M, NanoStructured Mater., 8, 785 (1997) 
Kukli K, Ritala M, Leakela M, Lappalainen R, Chem. Vap. Deposition, 4, 29 (1998) 
Kuo J, Rogers J, Surf. Sci., 453, 119 (2000) 
Kytokivi A, Lakomaa EL, Root A, Osterholm H, Jacobs JP, Brongersma HH, Langmuir, 13(10), 2717 (1997) 
Lim JW, Park HS, Kang SW, J. Electrochem. Soc., 148(6), C403 (2001) 
Leskela M, Ritala M, J. Phys. 4, 5(C5), 937 (1995)
Leskela M, Ritala M, J. Phys. 4, 9(Pr8), 837 (1999)
Luo Y, Slater D, Han M, Moryl J, Osgood RM, Chen JG, Langmuir, 14(6), 1493 (1998) 
Martensson I, Larsson K, Carlsson JO, Appl. Surf. Sci., 136, 137 (1998) 
Martensson P, Carlsson JO, J. Electrochem. Soc., 145(8), 2926 (1998) 
Min JS, Park JS, Park HS, Kang SW, J. Electrochem. Soc., 147(10), 3868 (2000) 
Min JS, Son SW, Kang WG, Chun SS, Kang SW, Jpn. J. Appl. Phys., 37, 4999 (1998) 
Na JS, Kim DH, Yong K, Rhee SW, J. Electrochem. Soc., 149(1), C23 (2002) 
Nieminen M, Putkonen M, Niinisto L, Appl. Surf. Sci., 174, 155 (2001) 
Niinisto L, Ritala M, Leskela M, Mater. Sci. Eng. B, 41, 23 (1996) 
Nilsen O, Peussa M, Fjellvag H, Niinisto L, Kjekshus A, J. Mater. Chem., 9, 1781 (1999) 
Park DG, Cho HJ, Lim KY, Lim C, J. Appl. Phys., 89, 6275 (2001) 
Park JS, Lee MJ, Lee CS, Kang SW, Electrochem. Solid-State Lett., 4, C17 (2001) 
Perkins CM, Triplett BB, Mclntype PC, Saraswat KC, Haukka S, Tuominen M, Appl. Phys. Lett., 78, 2357 (2001) 
Putkonen M, Sajavaara T, Johansson LS, Niinisto L, Chem. Vap. Deposition, 7, 44 (2001) 
Rahtu A, Kukli K, Ritala M, Chem. Mater., 13, 817 (2001) 
Ritala M, Juppo M, Kukli K, Rahtu A, Leskela M, J. Phys. 4, 9(Pr8), 1021 (1999)
Ritala M, Appl. Surf. Sci., 112, 223 (1997) 
Ritala M, Kukli K, Rahtu A, Raisanen PI, Leskela M, Sajavaara T, Keinonen J, Science, 288(5464), 319 (2000) 
Ritala M, Leskela M, Nanotechnology, 10, 19 (1999) 
Ritala M, Leskela M, Niinisto L, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 250(1-2), 72 (1994) 
Ritala M, Leskela M, Niinisto L, Haussalo P, Chem. Mater., 5, 1174 (1994) 
Ritala M, Leskela M, Rauhala E, Jokinen J, J. Electrochem. Soc., 145(8), 2914 (1998) 
Ritala M, Saloniemi H, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 286(1-2), 54 (1996) 
Sang B, Yamada A, Konagai M, Jpn. J. Appl. Phys., 37, L1125 (1998) 
Sang B, Yamada A, Konagai M, Jpn. J. Appl. Phys., 37, L206 (1998) 
Schuisky M, Harsta A, Aidla A, Kukli K, Kiisler AA, Aarik J, J. Electrochem. Soc., 147(9), 3319 (2000) 
Seim H, Molsa H, Nieminen M, Fjellvag H, Niinisto L, J. Mater. Chem., 7, 449 (1997) 
Solanki R, Pathangey B, Electrochemical Solid-State Lett., 3, 479 (2000)
Suisalu A, Aarik J, Mandar H, Sildos I, Thin Solid Films, 336(1-2), 295 (1998) 
Suntola T, Thin Solid Films, 216, 84 (1992) 
Suntola T, Handbook Crystal Growth, 3, 601 (1994)
Suntola T, Appl. Surf. Sci., 100-101, 391 (1996) 
Tarre A, Rosental A, Sammelselg V, Uustare T, Appl. Surf. Sci., 175-176, 111 (2001) 
Tiitta M, Nykanen E, Soininen P, Niinisto L, Leskela M, Lappalainen R, Mater. Res. Bull., 33(9), 1315 (1998) 
Utriainen M, Laukkanen MK, Johansson LS, Niinisto L, Appl. Surf. Sci., 157, 151 (2000) 
Vehkamaki M, Hatanpaa T, Hanninen T, Ritala M, Leskela M, Electrochem. Solid-State Lett., 2, 504 (1999) 
Yamada A, Sang B, Konagai M, Appl. Surf. Sci., 112, 216 (1997) 
Yamamoto S, Oda S, Chem. Vap. Deposition, 7, 7 (2001) 
Yang WS, Kim YK, Yang SY, Choi JH, Park HS, Lee SI, Yoo JB, Surf. Coat. Technol., 131, 79 (2000) 
Ylilammi M, Thin Solid Films, 279(1-2), 124 (1996) 
Yousfi EB, Fouache J, Lincot D, Appl. Surf. Sci., 153, 223 (2000) 
Yun JH, Rhee SW, Thin Solid Films, 292(1-2), 324 (1997) 
Yun JY, Park MY, Rhee SW, J. Electrochem. Soc., 146(5), 1804 (1999) 
Yun SJ, Lee KH, Skarp J, Kim HR, Nam KS, J. Vac. Sci. Technol. A, 15(6), 2993 (1997) 
Zhang H, Solanki R, J. Electrochem. Soc., 148(4), F63 (2001) 
Zhang H, Solanki R, Roberds B, Bai G, Banerjee I, J. Appl. Phys., 87, 1921 (2000) 

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