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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received August 13, 2001
Accepted November 14, 2001

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Dry Etching of SrBi2Ta2O9: Comparison of Inductively Coupled Plasma Chemistries

Jin Su Park Tae Hee Kim Chang Sun Choi¹ Yoon-Bong Hahn^†

School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea ¹Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea

Korean Journal of Chemical Engineering, May 2002, 19(3), 486-490(5), 10.1007/BF02697161

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Abstract

A systematic study of the etch characteristics of SrBi2Ta2O9 (SBT) thin films in inductively coupled plasmas (ICPs) has been performed with various chemistries of Cl2/Ar, Cl2/O2/Ar, Cl2/NF3/Ar, and Cl2/NF3/O2/Ar. Etch rate was dependent on plasma chemistries and parameters. Addition of O2 stabilized the perovskite structure of SBT film and suppressed the etch rate, but NF3 enhanced the etch rate substantially mainly due to reactive fluorine radicals. Maximum etch rates obtained were: 740 Å/min with Cl2/Ar, 320 Å/min with Cl2/O2/Ar, 1,500 Å/min with Cl2/NF3/Ar, and 1,600 Å/min with Cl2/NF3/O2/Ar at 5 mTorr, 700W ICP power and 150 W rf chuck power. Electrical properties of the SBT films were quite dependent on plasma chemistries employed; Cl2/NF3/O2/Ar showed the least damage in the films and resulted in the best P-E hysteresis loop having remnant polarization (2Pr)=12.3 μC/cm(2) and coercive field (Ec)=41.9 V/cm.

Keywords

Dry Etching SBT(SrBi2Ta2O9) ICPs

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