The catalytic reaction concept was introduced in the growth of semiconductor micro- and nano-crystals. It was found that gallium nitride (GaN) micro- and nano-crystal structures, carbon nanaotubes, and silicon carbide (SiC) nanostructures could be efficiently grown using transition metal catalysts. The use of Ni catalyst enhanced the growth rate and crystallinity of GaN micro-crystals. At 1,100 ℃, the growth rate of GaN micro-crystals grown in the presence_x000D_ of Ni catalyst was over nine times higher than that in the absence of the catalyst. The crystal quality of the GaN microcrystals was almost comparable to that of bulk GaN. Good quality GaN nanowires was also grown over Ni catalyst loaded on Si wafer. The nanowires had 6H hexagonal structure and their diameter was in the range of 30-50 nm. Multiwall nanotubes (MWNTs) were grown over 20Fe : 20Ni : 60Al2O3 catalyst. However, single wall nanotubes (SWNTs) were grown over 15Co : 15Mo : 70MgO catalyst. This result showed that the structure of CNTs could be controlled by the selection of catalysts. The average diameters of MWNTs and SWNTs were 20 and 10 nm, respectively. SiC nanorod crystals were prepared by the reaction of catalytically grown CNTs with tetrametysilane. Structural and optical properties of the catalytically grown semiconductor micro- and nano-crystals were characterized using various analytic techniques.

Catalytic Growth Micro- and Nano-Crystals GaN MWNT SWNT SiC

Akasaki I, Amano H, Jpn. J. Appl. Phys., 36, 5393 (1997) 
Alvarez WE, Kitiyanan B, Borgna A, Resasco DE, Carbon, 39, 547 (2001) 
Bethune DS, Kiang CH, De Vries MS, Gorman G, Savoy R, Vazquez J, Beyers R, Nature, 363, 605 (1993) 
Chen CC, Yeh CC, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF, J. Am. Chem. Soc., 123(12), 2791 (2001) 
Chen ZM, Ma JP, Yu MB, Wang JN, Ge WK, Woo PW, Mater. Sci. Eng. B, 75, 180 (2000) 
Cherns D, Young WT, Steeds JW, Ponce FA, Nakamura S, J. Cryst. Growth, 178, 201 (1997) 
Choi YC, Bae DJ, Lee YH, Lee BS, Han IT, Choi WB, Lee NS, Kim JM, Synth. Met., 108, 159 (2000) 
Dai H, Rinzler AG, Nikolaev P, Thess A, Colbert DT, Smalley RE, Chem. Phys. Lett., 260, 471 (1996) 
Derycke V, Martel R, Appenzeller J, Avouris P, Nano Lett., 1, 453 (2001) 
Dillon AC, Jones KM, Bekkedahl TA, Kiang CH, Bethune DS, Heben MJ, Nature, 386(6623), 377 (1997) 
Duan XF, Lieber CM, J. Am. Chem. Soc., 122(1), 188 (2000) 
Gonsalves KE, Rangarajan SD, Carlson G, Kumar J, Yang K, Benaissa M, Jose-Yacanan M, Appl. Phys. Lett., 71, 2175 (1997) 
Gu S, Ahang L, Zhang R, Wicks GW, Kuech TF, "Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy," Proc. Int. Workshop on Nitride Semiconductors, 23-26 (2000)
Guo T, Nikolaev P, Thess A, Colbert DT, Smalley RE, Chem. Phys. Lett., 243, 49 (1995) 
Hassanien A, Tokumoto M, Kumazawa Y, Kataura H, Maniwa Y, Suzuki S, Achiba Y, Appl. Phys. Lett., 73, 3839 (1998) 
He M, Zhou P, Moharmmad SN, Harris GL, Halpern JB, Jacobs R, Sarney WL, Salamanca-Riba L, J. Cryst. Growth, 231, 357 (2001) 
Hess S, Walraet F, Taylor RA, Ryan JF, Beaumont B, Gibart P, Phys. Rev., B, Condens. Matter, 58, R15973 (1998)
Iijima S, Nature, 354, 56 (1991) 
Im JS, Sposili RS, MRS Bull., March, 39 (1996)
Iijima S, Ichihashi T, Nature, 363, 603 (1993) 
Ivanov V, Fonseca A, Nagy JB, Lucas A, Lambin P, Bernaerts D, Zhang XB, Carbon, 33, 1727 (1995) 
Iverson RB, Reif R, J. Appl. Phys., 62, 1675 (1987) 
Jang J, Oh JY, Kim SK, Choi YJ, Yoon SY, Kim CO, Nature, 395(6701), 481 (1998) 
Kibria AKM, Fazle MYH, Park KS, Nahm KS, Int. J. Hydrog. Energy, 26, 823 (2001) 
Kibria AKMF, Mo YH, Nahm KS, Catal. Lett., 71(3-4), 229 (2001)
Fazle Kibria AKM, Mo YH, Yun MH, Kim MJ, Nahm KS, Korean J. Chem. Eng., 18(2), 208 (2001)
Kim W, Aktas O, Salvador A, Botchkarev A, Sverdlov B, Mohammad SN, Morkoc H, Solid State Electronics, 41, 169 (1997) 
Koo CM, Kim MJ, Choi MH, Kim SO, Chung IJ, HWAHAK KONGHAK, 39(5), 635 (2001)
Lee SH, Nahm KS, Suh EK, Hong MH, Phys. Stat. Sol., 228, 371 (2001) 
Lee SJ, Kim MH, Kim YT, Chung GY, Korean J. Chem. Eng., 19(1), 167 (2002)
Maser WK, Bernier P, Lambert JM, Stephan O, Ajayan PM, Colliex C, Brotons V, Planeix JM, Coq B, Molinie P, Lefrant S, Synth. Met., 81, 243 (1996) 
Mo YH, Kibria AKMF, Nahm KS, Synth. Met., 122, 443 (2001) 
Nahm KS, Ahn SH, Lee SH, "The Catalystic Growth of GaN Powders," Proc Int. Workshop on Nitride Semiconductors, 31 (2000)
Park CI, Kang JH, Kim KC, Suh EK, Lim KY, Nahm KS, J. Korean Phys. Soc., 37, 1007 (2000)
Park YJ, Son MH, Kim EK, Min SK, J. Korean Phys. Soc., 32, 621 (1998)
Peigney A, Laurent C, Dobigeon F, Rousset A, J. Mater. Res., 12, 613 (1997)
Porowski S, J. Cryst. Growth, 166, 583 (1996) 
Rao AM, Richter E, Bandow S, Chase B, Eklund PC, Williams KA, Fang S, Subbaswamy KR, Menon M, Thess A, Smalley RE, Dresselhaus G, Dresselhaus MS, Science, 275(5297), 187 (1997) 
Saito Y, Yoshikawa T, Okuda M, Fujimoto N, Sumiyama K, Suzuki K, Kasuya A, Nishina Y, J. Phys. Chem. Solids, 54, 1849 (1993) 
Seo YH, Nahm KS, An MH, Suh EK, Lee YH, Lee KB, Lee HJ, Jpn. J. Appl. Phys., 33, 6425 (1994) 
Seo YH, Nahm KS, Suh EK, Lee HJ, Hwang YG, J. Vac. Sci. Technol. A, 15(4), 2226 (1997) 
Shibata M, Furuya T, Sakaguchi H, Kurma S, J. Cryst. Growth, 196, 47 (1999) 
Shmagin IK, Muth JF, Lee JH, Kolbas RM, Balkas CM, Sitar Z, Davis RF, Appl. Phys. Lett., 71, 455 (1997) 
Sun Y, Miyasato T, Wigmore JK, J. Appl. Phys., 85, 3377 (1999) 
Tarasov BP, Shulga YM, Fokin VN, Vasilets VN, Shulga NY, Schur DV, Yartys VA, J. Alloy. Compd., 314, 296 (2001) 
Xie Y, Qian YT, Wang WZ, Zhang SY, Zhang YH, Science, 272(5270), 1926 (1996) 
Yoon SY, Park SJ, Kim KH, Jang J, Thin Solid Films, 383(1-2), 34 (2001) 
Yu MB, Rusli, Yoon SF, Xu SJ, Chew K, Cui J, Ahn J, Zhang Q, Thin Solid Films, 377-378, 177 (2000) 
Zhang SL, Zhu BF, Huang F, Yan Y, Shang EY, Fan S, Han W, Solid State Commun., 111, 647 (1999)