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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received December 24, 2001
Accepted April 18, 2002

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Preparation of Nano-Sized Silicon Carbide Powder Using Thermal Plasma

Seung-Min Oh Mark. Cappelli¹ Dong-Wha Park^†

Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Gu, Inchon 402-751, Korea ¹Department of Mechanical Engineering, Stanford University, Stanford, CA 94305-3032, USA

dwpark@inha.ac.kr

Korean Journal of Chemical Engineering, September 2002, 19(5), 903-907(5), 10.1007/BF02706987

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Abstract

Nano-sized silicon carbide (SiC) powder was prepared by thermal plasma process using silicon tetrachloride (SiCl4) and methane (CH4). The synthesized powder was characterized by X-ray diffraction pattern, scanning electron microscopy, transmission electron microscopy, FT-IR spectroscopy and particle size analyzer. The powder was dominated by β-SiC including some of α-SiC and free carbon species. The quality of the powder was varied with process conditions such as the molar ratio of H/Si and C/Si, and collecting positions. It was known that the conversion to SiC was mainly affected by the addition of hydrogen gas because it promoted the decomposition and reduction of SiCl4. CH4 was easily decomposed to carbon species for the formation of SiC as well as removal of impure oxygen, but excessive carbon suppressed the formation of crystalline SiC and resulted in the solid carbon contamination. The optimum ratio of H/Si was approx. 26 and that of C/Si was 1.1. For collecting positions, the powder collected at the vessel and filter was preferable to that at the reaction tube. The average size of the powder synthesized was estimated to be below 100 nm and uniform in distribution.

Keywords

Thermal Plasma Nano-sized Powder Silicon Carbide Preparation Process

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