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In relation to this article, we declare that there is no conflict of interest.
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Received February 26, 2002
Accepted August 2, 2002
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Decomposition of Tetrafluorocarbon in Dielectric Barrier Discharge Reactor

Clean Technology Center, Korea Institute of Science & Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
nabk@kist.re.kr
Korean Journal of Chemical Engineering, November 2002, 19(6), 917-920(4), 10.1007/BF02707211
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Abstract

The decomposition of CF4 in dielectric barrier discharge at atmospheric pressure was examined. The effect of O2 contents, N2 contents, and total flow rate on CF4 conversion was experimentally investigated. The maximum conversion of CF4 was about 87% at 5 kV, 15 kHz for the feed gas stream containing 5 sccm CF4, 7.5 sccm O2, and 187.5 sccm Ar. CO, CO2, and COF2 were the main products when O2 was used as the additive gas. NOx was produced when N2 was used as the additive gas. The conversion of CF4 was increased while the applied voltage and the residence time were increased. When nitrogen was added to argon as the diluent gas, the conversion of CF4 was decreased with the increase of the nitrogen content.

References

Cho W, Baek Y, Pang H, Kim YC, Korean J. Chem. Eng., 15(5), 500 (1998)
Hartz CL, Ban JW, Jackson MW, Wofforo BA, Environ. Sci. Technol., 32, 682 (1998) 
Jeong HK, Kim SC, Han C, Lee H, Song HK, Na BK, Korean J. Chem. Eng., 18(2), 196 (2001)
Lee H, Savinov SY, Song HK, Na BK, J. Chem. Eng. Jpn., 34(11), 1356 (2001) 
Liao MY, Wong K, McVittie JP, Saraswat KC, J. Vac. Sci. Technol. B, 17(6), 2638 (1999) 
Mohindra V, Chae H, Sawin HH, Mocella MT, IEEE Trans. Semicond. Manuf., 10(3), 399 (1997) 
Ravishankara AR, Solomon S, Turnipseed AA, Warren RF, Science, 259, 194 (1993) 
Savinov SY, Lee H, Song HK, Na BK, Ind. Eng. Chem. Res., 38(7), 2540 (1999) 
Wofforo BA, Jackson MW, Harrz CL, Bevan JW, Environ. Sci. Technol., 33, 1892 (1999) 

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