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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received June 20, 2002
Accepted August 8, 2002

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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STM Investigation of Nano-structures Fabricated on Passivated Si Surfaces

Jeong Sook Ha^† Kang-Ho Park¹ Kyoung-Wan Park¹ Wan Soo Yun²

Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea ¹Semiconductor Basic Research Laboratories, ETRI, Daejeon 305-600, Korea ²Electronic Devices Group, KRISS, Daejeon 305-600, Korea

jeongsha@korea.ac.kr

Korean Journal of Chemical Engineering, January 2003, 20(1), 169-173(5), 10.1007/BF02697204

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Abstract

We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.

Keywords

Nano-fabrication Passivated Si Surfaces Scanning Tunneling Microscope Atomic Force Microscope Ag Nano-dot Si Nano-dot Carbon Nanotube Au Nano-wire

References

Averin DV, Likharev KK, Altshuler, B.L., Lee P.A. and Webb, R.A. (Eds.), "Mesoscopic Phenomena in Solids," Chap. 6, North-Holland, New York (1991)
Behrish R, "Sputtering by Particle Bombardment," Springer, Berlin (1981)
Chen W, Ahmed H, Appl. Phys. Lett., 63, 1116 (1993)
Chen W, Ahmed H, Nakazoto K, Appl. Phys. Lett., 66, 3383 (1995)
Fischer B, Chou SY, Appl. Phys. Lett., 62, 1414 (1993)
Goglides E, Grigoropoulos S, Nassiopoulos AG, Microelectron. Eng., 27, 449 (1995)
Ha JS, Park KH, Ko YJ, Yun WS, Kim SK, Surf. Sci., 426, 373 (1999)
Ha JS, Park KH, Yun WS, Ko YJ, Jpn. J. Appl. Phys., 40, 2429 (2001)
Markovich G, Leff DV, Chung SW, Soyez HM, Dun B, Heath JR, Appl. Phys. Lett., 70, 3107 (1997)
Nassipoulos G, Grigoropoulos S, Goglides E, Papadimitrou D, Appl. Phys. Lett., 66, 1114 (1995)
Park KH, Ha JS, Yun WS, Lee EH, Surf. Sci., 415, 320 (1998)
Park KH, Ha JS, Yun WS, Shin M, Ko YJ, J. Vac. Sci. Technol. B, 18(5), 2365 (2000)
Rabe JP, Buchholz S, Appl. Phys. Lett., 68, 1377 (1996)
Rich DH, Franklin GE, Leibsle FM, Miller T, Chiang TC, Phys. Rev., B, Condens. Matter, 40, 11804 (1989)
Seeger K, Palmer RE, Appl. Phys. Lett., 74, 1627 (1999)
Tada T, Kanayama T, koga K, Seeger K, Carroll SJ, Weibel P. Plmer RE, Microelectron. Eng., 41-42, 539 (1998)
Tada T, Kanayama T, Koga K, Weibel P, Carroll SJ, Seeger K, Plmer RE, J. Phys. D, 31, L21 (1998)
Tiwari S, Rana F, hanafi H, Hartstein A, Crabb EF, Chan K, Appl. Phys. Lett., 68, 1377 (1996)