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In relation to this article, we declare that there is no conflict of interest.
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Received January 21, 2003
Accepted March 13, 2003
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Catalytic Effect of Metal Elements on the Growth of GaN and Mg-doped GaN Micro-Crystals

School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea
nahmks@moak.chonbuk.ac.kr
Korean Journal of Chemical Engineering, July 2003, 20(4), 653-658(6), 10.1007/BF02706903
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Abstract

Catalytic effect of metal elements was observed in the growth of GaN and Mg-doped GaN micro-crystals. High quality GaN micro-crystals were synthesized by direct reaction of gallium and ammonia using a Ni-mesh catalyst. Mg-doped GaN micro-crystals were also grown by the same reaction scheme in the presence of MgCl2. The growth rate of GaN micro-crystals markedly increased in the presence of the catalyst. The average grain size of GaN microcrystals_x000D_ synthesized in the presence of Ni and Mg metals was larger than that in the absence of the metals. The characterization of the catalytically grown GaN micro-crystals using transmission electron microscopy and X-ray and/or electron diffraction pattern showed the growth of dislocation free hexagonal GaN micro-crystals. Photoluminescence (PL) and Catholuminescence (CL) measurements also showed the growth of good quality n- and p-type GaN microcrystals using Ni catalyst.

References

Akasaki I, Amano H, Jpn. J. Appl. Phys., 36, 5393 (1997) 
Aujol E, Trassoudaine A, Castelluci D, Cadoret R, Mater. Sci. Eng., B82, 65 (2001)
Ban VS, J. Electrochem. Soc., 119, 761 (1972)
Bassignana IC, Wagemann K, Kuppers J, Ertl G, Surf. Sci., 175, 22 (1986) 
Cadoret R, J. Cryst. Growth, 205, 123 (1999) 
Chen CC, Yeh CC, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF, J. Am. Chem. Soc., 123(12), 2791 (2001) 
Cherns D, Young WT, Steeds JW, Ponce FA, Nakamura S, J. Cryst. Growth, 178, 201 (1997) 
Cho J, Kim S, Char K, Korean J. Chem. Eng., 20(1), 174 (2003)
Chrysostomou D, Flowers J, Zaera F, Surf. Sci., 439, 34 (1999) 
Goodwin TJ, Leppert VJ, Risbud SH, Kennedy IM, Lee HWH, Appl. Phys. Lett., 70, 3122 (1997) 
Gross M, Henn G, Ziegler J, Allenspacher P, Cychy C, Schroder H, Mater. Sci. Eng., B59, 94 (1999)
Ha JS, Park KH, Park KW, Yun WS, Korean J. Chem. Eng., 20(1), 169 (2003)
Jeong SM, Shim HW, Yoon HS, Cheong MG, Choi RJ, Suh EK, Lee HJ, J. Appl. Phys., 91, 9711 (2002) 
Kamp M, Mayer M, Pelzman A, Ebeling KJ, J. Nitride Semiconductor Research, 2, 26 (1997)
Kanie H, Kawano T, Sugimoto K, Kawai R, "Photoluminescence Excitation Spectrum of Undoped an Zn Doped InGaN Microcrystals," Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf., Series 1, 606 (2000)
Kataoka F, Satoh Y, Suda Y, Honda K, Toki H, "Blue Phophor GaN: Zn for VFDsand FEDs," Physics & Chemistry of Luminescent Materials, ECS 17 (1999)
Fazle Kibria AKM, Mo YH, Yun MH, Kim MJ, Nahm KS, Korean J. Chem. Eng., 18(2), 208 (2001)
Kim JR, So HM, Park JW, Appl. Phys. Lett., 80, 3548 (2002) 
Klauber C, Alvey MD, Yates JT, Surf. Sci., 154, 139 (1985) 
Kurai S, Abe T, Naoi Y, Sakai S, Jpn. J. Appl. Phys., 35, 1637 (1996) 
Lachab M, Youn DH, Fareed RSQ, Wang T, Sakai S, Solid State Electronics, 44, 1669 (2000) 
Lee H, Harris JS, J. Cryst. Growth, 169, 689 (1996) 
Li HD, Yang HB, Zou GT, Yu S, Lu JS, Qu SC, Wu YJ, J. Cryst. Growth, 171, 307 (1997) 
Liu SS, Stevenson DA, J. Electrochem. Soc., 125, 1161 (1978) 
McMurran J, Kouvetakis J, Nesting DC, Smith DJ, Hubbard JL, J. Am. Chem. Soc., 120(21), 5233 (1998) 
Nahm KS, Mo YH, Shajahan M, Lee SH, Korean J. Chem. Eng., 19(3), 510 (2002)
Nahm KS, Yang SH, Ahn SH, Korean J. Chem. Eng., 17(1), 105 (2000)
Park YJ, Son MH, Kim EK, Min SK, J. Korean Phys. Soc., 32, 621 (1998)
Porowdki S, J. Cryst. Growth, 166, 583 (1996) 
Porowski S, J. Cryst. Growth, 189-190, 153 (1998) 
Roh CH, Park YJ, Kim EK, Shim KB, J. Cryst. Growth, 237-239, 926 (2002) 
Shibata M, Furuya T, Sakaguchi H, Kuma S, J. Cryst. Growth, 196, 47 (1999) 
Smith M, Chen GD, Lin JY, Jiang HX, Salvador A, Sverdlov BN, Botchkarev A, Morkoc H, Goldenberg B, Appl. Phys. Lett., 68, 1883 (1996) 

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