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Received March 18, 2003
Accepted August 4, 2003
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Nanometer-Sized Patterning of Polysilicon Thin Films by High Density Plasma Etching Using Cl2 and HBr Gases
Department of Chemical Engineering and Institute of Clean Technology, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Korea
cwchung@inha.ac.kr
Korean Journal of Chemical Engineering, November 2003, 20(6), 1138-1141(4), 10.1007/BF02706950
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Abstract
High density plasma etching of polysilicon thin films was carried out in an inductively coupled plasma (ICP) for the formation of nanometer-sized patterns. The etch rate and etch selectivity of polysilicon films were investigated as a function of the concentration of Cl2 and HBr etch gases. The fast etch rate of polysilicon films was obtained in Cl2/Ar gas, and the high selectivity of polysilicon to photoresist was found in HBr/Ar gas. Finally, the etching of polysilicon films masked with photoresists was attempted in HBr/Ar and Cl2/Ar gases. The good pattern profile of polysilicon films with 60 nm lines was achieved in an HBr/Ar plasma.
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