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Received April 23, 2003
Accepted July 12, 2003
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Lonsdaleite Diamond Growth on Reconstructed Si (100) by Hot-Filament Chemical Vapor Deposition (HFCVD)
School of Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea 1Department of Physics, Chonbuk National University, Chonju 561-756, Korea
hsshin@chonbuk.ac.kr
Korean Journal of Chemical Engineering, November 2003, 20(6), 1154-1157(4), 10.1007/BF02706954
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Abstract
In this paper, the growth of Lonsdaleite diamond using hot-filament chemical vapor deposition (HFCVD) on flashed and reconstructed Si (100) is reported. Surface morphology studies using scanning electron microscopy (SEM) show that the film is composed of decahedron and icosahedron diamond particles. The X-ray diffraction (XRD) pattern has a strongest peak at 47° and a peak at 41°, which is indicative of Lonsdaleite nature of the grown diamond film. The Raman spectrum of the film shows a broadened diamond peak at wave number of 1,329 cm-1, which has shifted towards the peak position corresponding to Lonsdaleite nature of the diamond (1,326 cm-1).
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References
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Glass JT, Messier R, Fujimori N, "Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors," MRS (1990)
Ishizaka A, Shiraki Y, J. Electrochem. Soc., 133, 666 (1986)
Lawrence SP, Kania DR, "Diamond: Electronic Properties and Applications," Kluwer Academic Publisher (1995)
Lee YH, Chen CH, Chung SR, Chen SH, Wung YT, "Preparation and Properties of Lonsdaleite-like Carbon by HFCVD," International Symposium of Carbon," 554-555, Tokyo (1998)
Meng QB, Fei YJ, Kang J, Xiong YY, Lin ZD, Feng KA, Wu ZJ, Zhang SY, Modern Phys. Lett. B, 13, 125 (1999)
Spear KE, Dismukes JP, "Synthetic Diamond: Emerging CVD Science and Technology," John Wiley & Sons, New York (1993)
Stockel R, Janischowsky K, Rohmfeld S, Ristein J, Hundhausen M, Ley L, Diamond Relat. Mater., 5, 321 (1996)
Stoner BR, Sahaida SR, Bade JP, Southworth P, Ellis PJ, J. Mater. Res., 8, 1334 (1993)
Woo HK, Lee CS, Bello I, Lee ST, J. Mater. Res., 13, 1738 (1998)
Wurzinger P, Pongratz P, Gerber J, Ehrhardt H, Diamond Relat. Mater., 5, 345 (1996)
Yugo S, Kanai T, Kimura T, Muto T, J. Appl. Phys. Lett., 58, 1036 (1991)
