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Received August 5, 2003
Accepted September 8, 2003
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Organic Thin Film Transistors: Materials, Processes and Devices
Laboratory for Advanced Molecular Processing (LAMP),Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
srhee@postech.ac.kr
Korean Journal of Chemical Engineering, January 2004, 21(1), 267-285(19), 10.1007/BF02705409
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Abstract
For the past ten years, organic materials have been extensively investigated as an electronic material for thin film transistor (TFT) devices. Organic materials offer strong promise in terms of properties, processing and cost effectiveness and they can be used in flat panel displays, imagers, smart cards, inventory tags and large area electronic applications. In this review, we summarize the current status of the organic thin film transistors including substrate materials, electrodes, semiconducting and dielectric layers; organic thin film preparation methods; morphological studies for organic thin films; electrical characterization of gate dielectric layers and semiconducting active layers; and characterization of the OTFTs. Future prospects and investigations required to improve the OTFT performance are also given.
Keywords
References
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Klauk H, Gundlach DJ, Jackson TN, IEEE Trans. Electron Devices Lett., 20, 289 (1999)
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Sakai W, Chiang CK, Mater. Res. Soc. Symp. Proc., 710, DD6.17.1 (2002)
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Aihara T, Saito H, Inoue T, Wolff HP, Stuhn B, Polymer, 39(1), 129 (1998)
Araki O, Masuda T, Polymer, 43(3), 857 (2002)
Arlauskas K, Gaidelis V, Genevicius K, Jaska G, Synth. Met., 109, 101 (2000)
Assadi A, Svensson C, Willander M, Inganas O, Appl. Phys. Lett., 53, 195 (1988)
Baldo MA, Kozlov VG, Burrows PE, Forrest SR, Ban VS, Koene B, Thompson ME, Appl. Phys. Lett., 71, 3033 (1997)
Baldo M, Deutsch M, Burrows P, Gossenberger H, Gerstenberg M, Ban V, Forrest S, Adv. Mater., 10, 1505 (1998)
Bao Z, Dodabalapur A, Lovinger AJ, Appl. Phys. Lett., 69, 4108 (1996)
Bao ZA, Lovinger AJ, Brown J, J. Am. Chem. Soc., 120(1), 207 (1998)
Bao Z, Lovinger AJ, Dodabalapur A, Appl. Phys. Lett., 69, 3066 (1996)
Bartic C, Jansen H, Campitelli A, Borghs S, Org. Electron., 3, 65 (2002)
Bhat Vk, Bhat KN, Subrahamanyam A, Semicond. Sci. Technol., 14, 705 (1999)
Bistac S, Schultz J, Int. J. Adhes. Adhes., 17, 197 (1997)
Bolognesi A, DiCarlo A, Lugli P, Conte G, Synth. Met., 138, 95 (2003)
Brooks JS, Eaton DL, Anthony JE, Parkin SR, Brill JW, Sushko Y, Curr. Appl. Phys., 1, 301 (2001)
Brown AR, Jarrett CP, deLeeuw DM, Matters M, Synth. Met., 88, 37 (1997)
Brown AR, Pomp A, Leeuw DMD, Klaassen DBM, Havinga EE, J. Appl. Phys., 79, 2136 (1996)
Brutting W, Nguyen PH, Rieb W, Paasch G, Phys. Rev., B, Condens. Matter, 51, 9533 (1995)
Burland DM, Phys. Rev. Lett., 33, 833 (1974)
Burroughes JH, Friend RH, Allen PC, J. Phys. D: Appl. Phys., 22, 956 (1989)
Burrows PE, Forrest SR, Sapochak LS, Schwartz J, Fenter P, Buma T, Ban VS, Forrest JL, J. Cryst. Growth, 156, 91 (1995)
Calberg C, Blacher S, Gubbels F, Brouers F, Deltour R, Jerome R, J. Phys. D: Appl. Phys., 32, 1517 (1999)
Cantatore E, "Organic Materials: A New Chance for Electronics," Proceedings of the SAFE/IEEE workshop, 27 (2000)
Casu MB, Imperia P, Wong JE, Synth. Met., 138, 131 (2003)
Chen TA, Wu XM, Rieke RD, J. Am. Chem. Soc., 117(1), 233 (1995)
Chopra KL, Kaur I, "Thin Film Devices Applications," Plenum Press, New York and London (1983)
Clarisse C, Riou MT, Gauneau M, LeContellec M, Electron. Lett., 24, 674 (1988)
Cristescu R, Socol G, Mihailescu IN, Popescu M, Sava F, Ion E, Morosanu CO, Stamatin I, Appl. Surf. Sci., 208-209, 645 (2003)
Crone B, Dodabalapur A, Lin YY, Filas RW, Bao Z, LaDuca A, Sarpeshkar R, Katz HE, Li W, Nature, 403, 521 (2000)
deWijis GA, Mattheus CC, deGroot RA, Palstra TTM, Synth. Met., in press (2003)
Sweatman D, "Organic Devices: A Review," Microelectronic Engineering Research Conference (2001)
Dimitrakopoulos CD, Malenfant PRL, Adv. Mater., 14, 99 (2002)
Dimitrakopoulos CD, Mascaro DJ, IBM J. Res. Dev., 45, 11 (2001)
Dimitrakopoulos CD, Afzali-Ardakani A, Furman B, Kymissis J, Purushothaman S, Synth. Met., 89, 193 (1997)
Dimitrakopoulos CD, Brown AR, Pomp A, J. Appl. Phys., 80, 2501 (1996)
Dimitrakopoulos CD, Furman BK, Graham T, Hegde S, Purushothaman S, Synth. Met., 92, 47 (1998)
Dimitrakopoulos CD, Purushothaman S, Kymissis J, Callegari A, Shaw JM, Science, 283(5403), 822 (1999)
Dodabalapur A, Torsi L, Katz HE, Science, 268(5208), 270 (1995)
Faria LO, Moreira RL, J. Polym. Sci. B: Polym. Phys., 37(21), 2996 (1999)
Fuchigami H, Tsumura A, Koezuka H, Appl. Phys. Lett., 63, 1372 (1993)
Garnier F, Hajlaoui R, Kassmi AE, Horowitz G, Laigre L, Porzio W, Armanini M, Provasoli F, Chem. Mater., 10, 3334 (1998)
Garnier F, Chem. Phys., 227, 253 (1998)
Grove AS, "Physics and Technology of Semiconductor Devices," Wiley, New York (1967)
Gundlach DJ, Klauk H, Sheraw CD, Kuo CC, Huang JR, Jackson TN, "High-Mobility, Low Voltage Organic Thin Film Transistors," International Electron Devices Meeting Technical Digest, 111 (1999)
Gundlach DJ, Lin YY, Jackson TN, Nelson SF, Schlom DG, IEEE Trans. Electron Devices Lett., 18, 87 (1997)
Haddon RC, Perel AS, Morris RC, Palstra TTM, Hebard AF, Appl. Phys. Lett., 67, 121 (1995)
Herwig PT, Mullen K, Adv. Mater., 11, 480 (1999)
Horowitz G, Fichou D, Peng X, Xu Z, Garnier F, Solid State Commun., 72, 381 (1989)
Horowitz G, Hajlaoui R, Bouchriha H, Bourguiga R, Hajlaoui M, Adv. Mater., 10, 923 (1998)
Horowitz G, Hajlaoui R, Fihou D, Kissmi AI, J. Appl. Phys., 85, 3202 (1999)
Horowitz G, Adv. Mater., 10, 365 (1998)
Hu W, Liu Y, Xu Y, Liu S, Zhou S, Zhu D, Synth. Met., 104, 19 (1999)
Jager KM, McQueen DH, Vilcakova J, J. Phys. D: Appl. Phys., 35, 1068 (2002)
Jarrett CP, Friend RH, J. Appl. Phys., 77, 6289 (1995)
Jentzsch T, Juepner HJ, Brzezinka KW, Lau A, Thin Solid Films, 315(1-2), 273 (1998)
Juska G, Arlauskas K, Osterbacks R, Stubb H, Synth. Met., 109, 173 (2000)
Karl N, Kraft KH, Marktanner J, Synth. Met., 109, 181 (2000)
Karl N, Marktanner J, Stehle R, Warta W, Synth. Met., 41-43, 2473 (1991)
Karl N, Synth. Met., 133-134, 649 (2002)
Katz HE, Bao Z, J. Phys. Chem. B, 104(4), 671 (2000)
Katz HE, Laquindanum JG, Lovinger AJ, Chem. Mater., 10, 633 (1998)
Katz HE, Lovinger AJ, Laquindanum JG, Chem. Mater., 10, 457 (1998)
Katz HE, J. Mater. Chem., 7, 369 (1997)
Khatipov SA, High Energy Chem., 35, 291 (2001)
Kim YM, Pyo SW, Kim JS, Shim JH, Suh CH, Kim YK, Opt. Mater., 21, 425 (2002)
Klauk H, Gundlach DJ, Jackson TN, IEEE Trans. Electron Devices Lett., 20, 289 (1999)
Klauk H, Gundlach DJ, Bonse M, Kuo CC, Jackson TN, Appl. Phys. Lett., 76, 1692 (2000)
Klauk H, Gundlach DJ, Nichols JA, Sheraw CD, Bonse M, Jackson TN, Solid State Technol., 43, 63 (2000)
Klauk H, Schmid G, Radlik W, Weber W, Zhou L, Sheraw CD, Nichols JA, Jackson TN, Solid State Electron., 47, 297 (2003)
Knipp D, Street RA, Krusor B, Apte R, Ho J, J. Non-Cryst. Solids, 299-302, 1042 (2002)
Kuo CT, Chen SA, Hwang GW, Kuo HH, Synth. Met., 93, 155 (1998)
Kymissis I, Dimitrakopoulos CD, Purushothaman S, IEEE Trans. Electron Devices, 48, 1060 (2001)
Laquindanum JG, Katz HE, Lovinger AJ, J. Am. Chem. Soc., 120(4), 664 (1998)
Lee YS, Park JH, Choi JS, Opt. Mater., 21, 433 (2002)
Li ST, Arenholz E, Heitz J, Bauerle D, Appl. Surf. Sci., 125, 17 (1998)
Lin YY, Gundlach DJ, Jackson TN, IEEE Trans. Electron Devices, 44, 1325 (1997)
Lin YY, Gundlach DJ, Nelson SF, Jackson TN, IEEE Trans. Electron Devices Lett., 18, 606 (1997)
Lovinger AJ, Rothberg LJ, J. Mater. Res., 11, 1581 (1996)
Mayer Zu Heringdorf FJ, Reuter MC, Tromp RM, Nature, 412, 517 (2001)
Minakata T, Imai H, Ozaki M, J. Appl. Phys., 72, 4178 (1992)
Necliudov PV, Shur MS, Gundlach DJ, Jackson TN, Solid State Electron., 47, 259 (2003)
Nelson SF, Lin YY, Gundlach DJ, Jackson TN, Appl. Phys. Lett., 72, 1854 (1998)
Okubo S, "Organic Transistors Expedite Flexible EL Displays," Asia Bitz Tech., http://heasia.nikkeibp.com/nea/200112/peri_161078.html (2001)
Osswald TA, Menges G, "Materials Science of Polymers for Engineers," Hanser Gardner Publications (1996)
Peng X, Horowitz G, Fichou D, Garnier F, Appl. Phys. Lett., 57, 2013 (1990)
Sakai W, Chiang CK, Mater. Res. Soc. Symp. Proc., 710, DD6.17.1 (2002)
Salih AJ, Marshall JM, Maud JM, J. Non-Cryst. Solids, 227-230, 1240 (1998)
Scaife BKP, "Principles of Dielectrics," Oxford University Press, New York (1989)
Schon JH, Batlogg B, J. Appl. Phys., 89, 336 (2001)
Schon JH, Phys. Stat. Sol., 226, 257 (2001)
Schoonveld WA, Wildeman J, Fichous D, Bobbert PA, VanWees BJ, Klapwijk TM, Nature, 404, 977 (2000)
Schroder DK, "Semiconductor Material and Device Characterization," John Wiley & Sons, Inc., New York (1990)
Schon JH, Batlogg B, Appl. Phys. Lett., 74, 260 (1999)
Schon JH, Berg S, Kloc C, Batlogg B, Science, 287, 1022 (2000)
Schon JH, Kloc C, Batlogg B, Org. Electron., 1, 57 (2000)
Schon JH, Kloc C, Batlogg B, Phys. Rev. Lett., 86, 3843 (2001)
Schon JH, Kloc C, Batlogg B, Phys. Rev., B, Condens. Matter, 63, 245201 (2001)
Schon JH, Kloc C, Laudise RA, Batlogg B, Phys. Rev., B, Condens. Matter, 58, 12952 (1998)
Schon JH, Synth. Met., 122, 157 (2001)
Sheraw CD, Nichols JA, Gundlach DJ, Huang JR, Kuo CC, Klauk H, Jackson TN, Kane MG, Campi J, Cuomo FP, Greening BK, "An Organic Thin Film Transistor Backplane for Flexible Liquid Crystal Displays," 58th Device Research Conference Digest, 107 (2000)
Shtein M, Gossenberger HF, Benziger JB, Forrest SR, J. Appl. Phys., 89, 1470 (2001)
Sirringhaus H, Brown PJ, Friend RH, Nielsen MM, Bechgaard K, Langeveld-Voss BMW, Spiering AJH, Janssen RAJ, Meijer EW, Synth. Met., 111-112, 129 (2000)
Sirringhaus H, Brown PJ, Friend RH, Nielsen MM, Bechgaard K, Langeveld-Voss BMW, Spiering AJH, Janssen RAJ, Meijer EW, Herwig P, deLeeuw DM, Nature, 401, 685 (1999)
Sirringhaus H, Friend RH, Li XC, Moratti SC, Holmes AB, Feeder N, Appl. Phys. Lett., 71, 3871 (1997)
Sirringhaus H, Tessler N, Friend RH, Science, 280(5370), 1741 (1998)
Sirringhaus H, Tessler N, Friend RH, Synth. Met., 102, 857 (1999)
Stein M, Mapel J, Bensiger JB, Forrest SR, Appl. Phys. Lett., 81, 268 (2002)
Swiggers ML, Xia G, Slinker JD, Gorodetsky AA, Malliaras GG, Headrick RL, Weslowski BT, Shashidhar RN, Dulcey CS, Appl. Phys. Lett., 79, 1300 (2001)
Sze SM, "Physics of Semiconductor Devices," Wiley, New York (1981)
Tsumura A, Koezuka H, Ando T, Appl. Phys. Lett., 49, 1210 (1986)
Wieder HH, "Four Terminal Non Destructive Electrical and Galvanomagnetic Measurements," in Nondestructive Evaluation of Semiconductor Materials and Devices, ed., Zemel, J.N., Plenum Press, New York (1979)
Xie D, Jiang YD, Pan W, Li YR, Thin Solid Films, 424(2), 247 (2003)
Xu GF, Bao ZA, Groves JT, Langmuir, 16(4), 1834 (2000)
