Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received September 2, 2003
Accepted November 20, 2003
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Growth Mechanism of Needle-shaped ZnO Nanostructures over NiO-coated Si Substrates
Nano Materials Research Center and School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea 1Department of Semiconductor Science Technology, Chonbuk National University, Chonju 561-756, Korea 2Department of Materials Science, University of North Texas, P.O. Box 305310, Denton, Texas 76203-5310, USA
nahamks@moak.chonbuk.ac.kr
Korean Journal of Chemical Engineering, May 2004, 21(3), 733-738(6), 10.1007/BF02705513
Download PDF
Abstract
ZnO nanostructures were synthesized over NiO-coated Si substrate by a thermal evaporation of Zn powders in a vertical chemical vapor deposition reactor. The ZnO nanostructures had a needle-like morphology and the diameter of the structures decreased linearly from the bottom to the top. The bottom diameters of the ZnO nano-needles normally ranged from 20-100 nm and the lengths were in the range of 2-3 μm. The clear lattice fringes in HRTEM image indicated the growth of good quality hexagonal single-crystal ZnO. Field emission characteristics of the ZnO nanoneedles showed that the turn-on field was about 8.87 V/μm with a field enhancement factor of about 1099. The growth mechanism of the ZnO nano-needles was proposed on the basis of experimental data.
References
Ahn SH, Lee SH, Nahm KS, Suh EK, Hong MH, J. Cryst. Growth, 234, 70 (2002)
Bonard JM, Weiss N, Kind H, Stockli T, Forro L, Kern K, Chatelain A, Adv. Mater., 13, 184 (2001)
Boo JH, Lee SB, Yu KS, Sung MM, Kim Y, Surf. Coat. Technol., 131, 147 (2000)
Chen CC, Yeh CC, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF, J. Am. Chem. Soc., 123(12), 2791 (2001)
Choi YC, Kim WS, Park YS, Lee SM, Bae DJ, Lee YH, Park GS, Choi WB, Lee NS, Kim JM, Adv. Mater., 12, 746 (2000)
Dai Y, Zhang Y, Li QK, Nan CW, Chem. Phys. Lett., 358, 83 (2002)
Frederick CK, Wong KW, Tang YH, Zhang YF, Bello I, Lee ST, Appl. Phys. Lett., 75, 1700 (1999)
Gao PX, Wang ZL, J. Phys. Chem. B, 106(49), 12653 (2002)
Hu JQ, Li Q, Wong NB, Lee CS, Lee ST, Chem. Mater., 14, 1216 (2002)
Huang MH, Wu YY, Feick H, Tran N, Weber E, Yang P, Adv. Mater., 13, 113 (2001)
Kim KC, Park CI, Roh JI, Nahm KS, Hahn YB, Lee YS, Lim KY, J. Electrochem. Soc., 148(5), C383 (2001)
Kim HJ, Kim WS, Korean J. Chem. Eng., 18(2), 202 (2001)
Knacke O, Kubaschewski O, Hesselmann K, "Thermochemical Properties of Inorganic Substances I-II," Springer-Verlag Berlin: 2nd edition, 1455 (1991)
Lauhon LJ, Gudiksen MS, Wang D, Lieber CM, Nature, 420, 57 (2002)
Lide DR, "CRC Handbook of Chemistry and Physics," 74th edition, CRC Press, 4-36 (1993)
Lee CJ, Lee TJ, Lyu SC, Zhang Y, Ruh H, Lee HJ, Appl. Phys. Lett., 81, 3648 (2002)
Lee JS, Kang MI, Kim SS, Lee MS, Lee YK, J. Cryst. Growth, 249, 201 (2003)
Lee SH, Yu SG, Jeong TW, Heo JN, Kim WS, Lee CS, Lee JH, Kim JM, Kim TY, Nahm KS, "Field Emission of Zinc Oxide Nanostructure," 2003 MRS Spring Meeting Proceedings, Volume 776, Q11.35, San Francisco Marriott & Argent Hotels San Francisco, CA, April 21-25 (2003)
Li Y, Meng GW, Zhang LD, Philipp F, Appl. Phys. Lett., 76, 2011 (2000)
Li YB, Bando Y, Sato T, Kurashima K, Appl. Phys. Lett., 81, 144 (2002)
Liu ZW, Jun KW, Roh HS, Park SE, Oh YS, Korean J. Chem. Eng., 19(5), 735 (2002)
Llewellyn PL, Chevrot V, Ragai J, Cerclier O, Estienne J, Rouquerol F, Solid State Ion., 101-103, 1293 (1997)
Lyu SC, Zhang Y, Ruh H, Lee HJ, Shim HY, Suh EK, Lee CJ, Chem. Phys. Lett., 363, 134 (2002)
Lyu SC, Cha OH, Suh EK, Ruh H, Lee HJ, Lee CJ, Chem. Phys. Lett., 367, 136 (2003)
Minami T, Miyata T, Yamamoto T, Surf. Coat. Technol., 108-109, 583 (1998)
Nahm KS, Kim TY, Lee SH, Korean J. Chem. Eng., 20(4), 653 (2003)
Pan ZW, Dai ZR, Wang ZL, Science, 291(5510), 1947 (2001)
Park WI, Kim DH, Jung SW, Yi GC, Appl. Phys. Lett., 80, 4232 (2002)
Park WI, Yi GC, Kim MY, Pennycook SJ, Adv. Mater., 14, 1841 (2002)
Sohn JR, Bae JH, Korean J. Chem. Eng., 17(1), 86 (2000)
Sun XM, Chen X, Deng ZX, Li YD, Mater. Chem. Phys., 78, 99 (2002)
Tseng YK, Huang CJ, Cheng HM, Lin IN, Liu KS, Chen IC, Adv. Funct. Mater., 13, 811 (2003)
Wang YG, Lau SP, Zhang XH, Lee HW, Hng HH, Tay BK, J. Cryst. Growth, 252, 265 (2003)
Wang YW, Zhang LD, Wang GZ, Peng XS, Chu ZQ, Liang CH, J. Cryst. Growth, 234, 171 (2002)
Wu Y, Fan R, Yang P, Nano Lett., 2, 83 (2002)
Wu ZS, Deng SZ, Xu NS, Chen J, Zhou J, Chen J, Appl. Phys. Lett., 80, 3829 (2002)
Yan HF, Xing YJ, Hang QL, Yu DP, Wang YP, Xu J, Xi ZH, Feng SQ, Chem. Phys. Lett., 323, 224 (2000)
Yang P, Yan H, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R, Choi HJ, Adv. Funct. Mater., 12, 323 (2002)
Zheng MJ, Zhang LD, Li GH, Shen WZ, Chem. Phys. Lett., 363, 123 (2002)
Zhou Z, Chu L, Tang W, Gu L, J. Electrostat., 57, 347 (2003)
Zhu J, Fan S, J. Mater. Res., 14, 1175 (1999)
Zhu W, Bower C, Zhou O, Kochanski G, Jin S, Appl. Phys. Lett., 75, 873 (1999)
Zhu YW, Zhang HZ, Sun XC, Feng SQ, Xu J, Zhao Q, Xiang B, Wang RM, Yu DP, Appl. Phys. Lett., 83, 144 (2003)
Bonard JM, Weiss N, Kind H, Stockli T, Forro L, Kern K, Chatelain A, Adv. Mater., 13, 184 (2001)
Boo JH, Lee SB, Yu KS, Sung MM, Kim Y, Surf. Coat. Technol., 131, 147 (2000)
Chen CC, Yeh CC, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF, J. Am. Chem. Soc., 123(12), 2791 (2001)
Choi YC, Kim WS, Park YS, Lee SM, Bae DJ, Lee YH, Park GS, Choi WB, Lee NS, Kim JM, Adv. Mater., 12, 746 (2000)
Dai Y, Zhang Y, Li QK, Nan CW, Chem. Phys. Lett., 358, 83 (2002)
Frederick CK, Wong KW, Tang YH, Zhang YF, Bello I, Lee ST, Appl. Phys. Lett., 75, 1700 (1999)
Gao PX, Wang ZL, J. Phys. Chem. B, 106(49), 12653 (2002)
Hu JQ, Li Q, Wong NB, Lee CS, Lee ST, Chem. Mater., 14, 1216 (2002)
Huang MH, Wu YY, Feick H, Tran N, Weber E, Yang P, Adv. Mater., 13, 113 (2001)
Kim KC, Park CI, Roh JI, Nahm KS, Hahn YB, Lee YS, Lim KY, J. Electrochem. Soc., 148(5), C383 (2001)
Kim HJ, Kim WS, Korean J. Chem. Eng., 18(2), 202 (2001)
Knacke O, Kubaschewski O, Hesselmann K, "Thermochemical Properties of Inorganic Substances I-II," Springer-Verlag Berlin: 2nd edition, 1455 (1991)
Lauhon LJ, Gudiksen MS, Wang D, Lieber CM, Nature, 420, 57 (2002)
Lide DR, "CRC Handbook of Chemistry and Physics," 74th edition, CRC Press, 4-36 (1993)
Lee CJ, Lee TJ, Lyu SC, Zhang Y, Ruh H, Lee HJ, Appl. Phys. Lett., 81, 3648 (2002)
Lee JS, Kang MI, Kim SS, Lee MS, Lee YK, J. Cryst. Growth, 249, 201 (2003)
Lee SH, Yu SG, Jeong TW, Heo JN, Kim WS, Lee CS, Lee JH, Kim JM, Kim TY, Nahm KS, "Field Emission of Zinc Oxide Nanostructure," 2003 MRS Spring Meeting Proceedings, Volume 776, Q11.35, San Francisco Marriott & Argent Hotels San Francisco, CA, April 21-25 (2003)
Li Y, Meng GW, Zhang LD, Philipp F, Appl. Phys. Lett., 76, 2011 (2000)
Li YB, Bando Y, Sato T, Kurashima K, Appl. Phys. Lett., 81, 144 (2002)
Liu ZW, Jun KW, Roh HS, Park SE, Oh YS, Korean J. Chem. Eng., 19(5), 735 (2002)
Llewellyn PL, Chevrot V, Ragai J, Cerclier O, Estienne J, Rouquerol F, Solid State Ion., 101-103, 1293 (1997)
Lyu SC, Zhang Y, Ruh H, Lee HJ, Shim HY, Suh EK, Lee CJ, Chem. Phys. Lett., 363, 134 (2002)
Lyu SC, Cha OH, Suh EK, Ruh H, Lee HJ, Lee CJ, Chem. Phys. Lett., 367, 136 (2003)
Minami T, Miyata T, Yamamoto T, Surf. Coat. Technol., 108-109, 583 (1998)
Nahm KS, Kim TY, Lee SH, Korean J. Chem. Eng., 20(4), 653 (2003)
Pan ZW, Dai ZR, Wang ZL, Science, 291(5510), 1947 (2001)
Park WI, Kim DH, Jung SW, Yi GC, Appl. Phys. Lett., 80, 4232 (2002)
Park WI, Yi GC, Kim MY, Pennycook SJ, Adv. Mater., 14, 1841 (2002)
Sohn JR, Bae JH, Korean J. Chem. Eng., 17(1), 86 (2000)
Sun XM, Chen X, Deng ZX, Li YD, Mater. Chem. Phys., 78, 99 (2002)
Tseng YK, Huang CJ, Cheng HM, Lin IN, Liu KS, Chen IC, Adv. Funct. Mater., 13, 811 (2003)
Wang YG, Lau SP, Zhang XH, Lee HW, Hng HH, Tay BK, J. Cryst. Growth, 252, 265 (2003)
Wang YW, Zhang LD, Wang GZ, Peng XS, Chu ZQ, Liang CH, J. Cryst. Growth, 234, 171 (2002)
Wu Y, Fan R, Yang P, Nano Lett., 2, 83 (2002)
Wu ZS, Deng SZ, Xu NS, Chen J, Zhou J, Chen J, Appl. Phys. Lett., 80, 3829 (2002)
Yan HF, Xing YJ, Hang QL, Yu DP, Wang YP, Xu J, Xi ZH, Feng SQ, Chem. Phys. Lett., 323, 224 (2000)
Yang P, Yan H, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R, Choi HJ, Adv. Funct. Mater., 12, 323 (2002)
Zheng MJ, Zhang LD, Li GH, Shen WZ, Chem. Phys. Lett., 363, 123 (2002)
Zhou Z, Chu L, Tang W, Gu L, J. Electrostat., 57, 347 (2003)
Zhu J, Fan S, J. Mater. Res., 14, 1175 (1999)
Zhu W, Bower C, Zhou O, Kochanski G, Jin S, Appl. Phys. Lett., 75, 873 (1999)
Zhu YW, Zhang HZ, Sun XC, Feng SQ, Xu J, Zhao Q, Xiang B, Wang RM, Yu DP, Appl. Phys. Lett., 83, 144 (2003)
