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Received August 20, 2004
Accepted October 28, 2004
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On the Origin of Electrodeposition Mechanism of ZnO on ITO Substrate
Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea 1Microcell Center, Nuricell Inc., Seoul 131-22, Korea 2Department of Chemical Engineering, Inha University, Inchon 402-751, Korea
Korean Journal of Chemical Engineering, January 2005, 22(1), 161-164(4), 10.1007/BF02701479
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Abstract
Zinc oxide (ZnO) was potentiostatically deposited on indium tin oxide (ITO) substrates. Comparing of the theoretical mass/charge ratio with experimental value measured by in-situ electrochemical quartz crystal microbalance, the origin of deposition mechanism of ZnO could be explained as follows: (i) surface pH enhancement due to the adsorption of hydroxide ion; (ii) the formation of intermediate species (i.e., zinc hydroxide (Zn(OH)+); (iii) ZnO deposition with production of water. Ex-situ morphological and structural analyses by scanning electron microscope and X-ray diffraction strongly supported the deposition mechanism of ZnO. This also showed that hexagonal shaped ZnO islands were first formed on ITO cathode and grew into compact ZnO films, and the formation behaviour of ZnO was clearly explained via analysis of the profile of measured current.
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References
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Izaki M, Katayama J, J. Electrochem. Soc., 147(1), 210 (2000)
de Jongh PE, Vanmaekelbergh D, Kelly JJ, J. Electrochem. Soc., 147(2), 486 (2000)
Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733 (2004)
Lee JY, Tak YS, J. Ind. Eng. Chem., 5(2), 139 (1999)
Lee J, Varela H, Uhm S, Tak Y, Electrochem. Commun., 2, 646 (2000)
Lee J, Tak Y, Electrochem. Solid State Lett., 4, C63 (2001)
Lee J, Noh TG, Tak Y, J. Ind. Eng. Chem., 8(5), 454 (2002)
Oh J, Lee J, Tak Y, Electrochem. Solid State Lett., 7, C63 (2004)
Suh YW, Rhee HK, Korean J. Chem. Eng., 19(1), 17 (2002)
Peulon S, Lincot D, J. Electrochem. Soc., 145(3), 864 (1998)
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Wang YG, Zhang SP, Lee XH, Hng HW, Tay BK, J. Cryst. Growth, 252, 265 (2003)
Zheng MJ, Zhang LD, Li GH, Shen WZ, Chem. Phys. Lett., 363, 123 (2002)
