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Received August 20, 2004
Accepted November 25, 2004
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Effects of Growth Variables on Structural and Optical Properties of InGaN/GaN Triangular-Shaped Quantum Wells
School of Chemical Engineering and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
Korean Journal of Chemical Engineering, March 2005, 22(2), 298-302(5), 10.1007/BF02701501
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Abstract
Structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (QW) structures were investigated under various conditions of growth parameters such as growth temperature, flow rate of Ga and/or In composition, and well and barrier widths. The optical properties affected by the growth parameters were well correlated with an In band gap, which is determined by the potential depth and the In composition in the well region. The emission peak energy was almost independent of the barrier width due to the relaxation of the piezoelectric fields in the triangular-shaped QWs. Photoluminescence spectra of the InGaN/GaN multiple QW structures showed a parabolic curve centered at 2.66 eV. The optical property of the triangular-shaped multiple QWs was substantially improved due to formation of quantum dot-like In composition fluctuations.
References
Arakawa Y, Someya T, Tachibana K, IPAP Conf. Series, 1, 403 (2000)
Choi RJ, Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures, Ph. D. Dissertation, Chonbuk National University (2003)
Choi RJ, Hahn YB, Shim HW, Suh EK, Hong CH, Lee HJ, Korean J. Chem. Eng., 20(6), 1134 (2003)
Choi RJ, Lee HJ, Hahn YB, Cho HK, Korean J. Chem. Eng., 21(1), 292 (2004)
Choi RJ, Shim HW, Han MS, Suh EK, Lee HJ, Hahn YB, Appl. Phys. Lett., 82, 2764 (2003)
Choi RJ, Shim HW, Jeong SM, Yoon HS, Suh EK, Hong CH, Lee HJ, Kim YW, Phys. Status Solidi A-Appl. Res., 192(2), 430 (2002)
Ho IH, Stringfellow GB, Appl. Phys. Lett., 69, 2701 (1996)
Jain SC, Willander M, Narayan J, VanOverstraeten R, J. Appl. Phys., 87, 965 (2000)
Kaneta A, Izumi T, Okamoto K, Kawakami Y, Fujita S, Narita Y, Inoue T, Mukai T, Jpn. J. Appl. Phys., 40, 110 (2001)
Krost A, Bohrer J, Dadgar A, Schnabel RF, Bimberg D, Hansmann S, Burkhard H, Appl. Phys. Lett., 67, 3325 (1995)
Mukai T, Morita D, Nakamura S, J. Cryst. Growth, 189-190, 778 (1998)
Nakamura S, Science, 281, 956 (1998)
Nakamura S, Chichibu SF, "Introduction to Nitride Semiconductor Blue Lasers and Light Emitting-Diodes", Taylor and Fancis, New York (2000)
Nakamura S, Jpn. Soc. Appl. Phys. International, 1, 5 (2000)
Narukawa Y, Kawakami Y, Funato M, Fusita Sz, Fujita Sg, Nakamura S, Appl. Phys. Lett., 70, 981 (1997)
Pearton SJ, Zolper JC, Shul RJ, Ren F, J. Appl. Phys., 86, 1 (1999)
Romano LT, McCluskey MD, VandeWalle CG, Northrup JE, Bour DP, Kneissl M, Suski T, Jun J, Appl. Phys. Lett., 75, 3950 (1999)
Strite S, Morkoc H, J. Vac. Sci. Technol. B, 10, 1237 (1992)
Tran CA, Karlicek RF, Schurman M, Osinsky A, Merai V, Li Y, Eliashevich I, Brown MG, Nering J, Ferguson I, Stall R, J. Cryst. Growth, 195, 397 (1998)
Choi RJ, Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures, Ph. D. Dissertation, Chonbuk National University (2003)
Choi RJ, Hahn YB, Shim HW, Suh EK, Hong CH, Lee HJ, Korean J. Chem. Eng., 20(6), 1134 (2003)
Choi RJ, Lee HJ, Hahn YB, Cho HK, Korean J. Chem. Eng., 21(1), 292 (2004)
Choi RJ, Shim HW, Han MS, Suh EK, Lee HJ, Hahn YB, Appl. Phys. Lett., 82, 2764 (2003)
Choi RJ, Shim HW, Jeong SM, Yoon HS, Suh EK, Hong CH, Lee HJ, Kim YW, Phys. Status Solidi A-Appl. Res., 192(2), 430 (2002)
Ho IH, Stringfellow GB, Appl. Phys. Lett., 69, 2701 (1996)
Jain SC, Willander M, Narayan J, VanOverstraeten R, J. Appl. Phys., 87, 965 (2000)
Kaneta A, Izumi T, Okamoto K, Kawakami Y, Fujita S, Narita Y, Inoue T, Mukai T, Jpn. J. Appl. Phys., 40, 110 (2001)
Krost A, Bohrer J, Dadgar A, Schnabel RF, Bimberg D, Hansmann S, Burkhard H, Appl. Phys. Lett., 67, 3325 (1995)
Mukai T, Morita D, Nakamura S, J. Cryst. Growth, 189-190, 778 (1998)
Nakamura S, Science, 281, 956 (1998)
Nakamura S, Chichibu SF, "Introduction to Nitride Semiconductor Blue Lasers and Light Emitting-Diodes", Taylor and Fancis, New York (2000)
Nakamura S, Jpn. Soc. Appl. Phys. International, 1, 5 (2000)
Narukawa Y, Kawakami Y, Funato M, Fusita Sz, Fujita Sg, Nakamura S, Appl. Phys. Lett., 70, 981 (1997)
Pearton SJ, Zolper JC, Shul RJ, Ren F, J. Appl. Phys., 86, 1 (1999)
Romano LT, McCluskey MD, VandeWalle CG, Northrup JE, Bour DP, Kneissl M, Suski T, Jun J, Appl. Phys. Lett., 75, 3950 (1999)
Strite S, Morkoc H, J. Vac. Sci. Technol. B, 10, 1237 (1992)
Tran CA, Karlicek RF, Schurman M, Osinsky A, Merai V, Li Y, Eliashevich I, Brown MG, Nering J, Ferguson I, Stall R, J. Cryst. Growth, 195, 397 (1998)
