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- In relation to this article, we declare that there is no conflict of interest.
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Received November 15, 2004
Accepted January 17, 2005
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Copyright © KIChE. All rights reserved.
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Two-Step Growth of ZnO Films on Silicon by Atomic Layer Deposition
School of Chemical Engineering and Technology, and Nano Materials Research Center, Chonbuk National University, Chonju 561-75, Korea
Korean Journal of Chemical Engineering, March 2005, 22(2), 334-338(5), 10.1007/BF02701506
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Abstract
Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 ℃ and second, the growth of the main layer at 210 ℃. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 Å buffer layer showed overall the best surface morphology and structural and optical properties.
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