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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received November 18, 2004
Accepted April 7, 2005

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Structural Properties of Amorphous Carbon Thin Films Deposited by LF (100 kHz), RF (13.56MHz), and Pulsed RF (13.56MHz) Plasma CVD

Dong-Sun Kim^†

Department of chemical engineering, College of Eng., Kongju National University, 182 Shinkwandong, Chungnam 314-701, Korea

dskim@kongju.ac.kr

Korean Journal of Chemical Engineering, July 2005, 22(4), 639-642(4), 10.1007/BF02706657

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Abstract

Amorphous carbon thin films were deposited by LF (100 kHz), RF (13.56MHz), and pulsed RF (13.56MHz) plasma CVD with DC self-bias voltage of .300 V and 50 mTorr on Si wafers at 15 oC using a mixture of methane and hydrogen for comparing structural properties of the deposited films in an asymmetric plasma reactor. The surface morphologies of the deposited films were observed by Atomic force microscopy (AFM). The average roughness (Ra) analyzed by AFM data was 4.03, 1,84, 1.52 A at LF (100 kHz), RF (13.56 MHz), and pulsed RF (13.56MHz) plasma, respectively. From these results, the films deposited by pulsed RF plasma have more smooth and dense surface compared with those deposited by LF (100 kHz), and RF (13.56MHz) plasma. The ratios of ID/IG obtained from Raman data were 2.69, 0.76 and 0.44 at LF (100 kHz), RF (13.56 MHz), and pulsed RF (13.56 MHz) plasma, respectively. It is concluded that the film deposited by pulsed RF plasma has more diamond-like properties compared with that deposited by LF (100 kHz), and RF (13.56 MHz) plasma.

Keywords

Amorphous Carbon Film PECVD LF RF Pulsed RF

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