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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received January 21, 2005
Accepted May 11, 2005

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Ion Dynamics in Plasma Processing for the Fabrication of Ultrafine Structures

Chang-Koo Kim^†

Department of Chemical Engineering, Ajou University, Suwon 443-749, Korea

changkoo@ajou.ac.kr

Korean Journal of Chemical Engineering, September 2005, 22(5), 762-769(8), 10.1007/BF02705796

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Abstract

.The flux, energy and angular distribution of ions generated from inductively coupled argon plasma were measured, using a gridded retarding field ion analyzer, to investigate the dynamics of ions in the plasma. The ion flux and the ion density at the sheath edge were found to increase with power, but to decrease with pressure. The ion energy was modulated, showing two peaks in the argon plasma, because the ratio of the ion transit time to the rf period was less than or comparable to unity. The peak, mean, minimum, and maximum ion energy decreased with increasing pressure, but were nearly constant as power was varied. The ion angular distributions had a Gaussian distribution peaked at zero angle from surface normal. The full-width-at-half-maximum was increased with increasing both power and pressure. The ion temperature was readily obtained from the ion angular distributions, and the value was in the range of 0.08-0.14 eV, agreeing with typical ion temperature values measured previously in inductively coupled plasmas.

Keywords

Plasma Ion Energy Distribution Ion Angular Distribution Ion Dynamics Ion Analyzer

References

Aydil ES, Quiniou BOM, Lee JTC, Gregus JA, Gottscho RA, Mater. Sci. Semicond. Process, 1, 75 (1998)
Bohm C, Perrin J, Rev. Sci. Instrum., 64, 31 (1993)
Chapman B, Glow Discharge Processes, John Wiley & Sons, Inc., New York (1980)
Cho BO, Ryu JH, Hwang SW, Lee GR, Moon SH, J. Vac. Sci. Technol. B, 18(6), 2769 (2000)
Chung CW, Byun YH, Kim HI, Korean J. Chem. Eng., 19(3), 524 (2002)
Flender U, Wiesemann K, J. Phys. D-Appl. Phys., 27, 509 (1994)
Gottscho RA, J. Vac. Sci. Technol. B, 11(5), 1884 (1993)
Hebner GA, J. Appl. Phys., 80, 2624 (1996)
Holber WM, Forster J, J. Vac. Sci. Technol. A, 8(5), 3720 (1990)
Hwang SW, Lee GR, Min JH, Moon SH, Korean J. Chem. Eng., 20(6), 1131 (2003)
Ingram SG, Braithwaite N, St J, J. Phys. D-Appl. Phys., 21, 1496 (1988)
Ingram SG, Braithwaite N, St J, J. Appl. Phys., 68(11), 5519 (1990)
Kortshagen U, Zethoff M, Plasma Sources Sci. Technol., 4, 541 (1995)
Liu J, Huppert GL, Sawin HH, J. Appl. Phys., 68, 3916 (1990)
O'Neill JA, Barnes MS, Keller JH, J. Appl. Phys., 73, 1621 (1993)
Panagopoulos T, Economou DJ, J. Appl. Phys., 85, 3435 (1999)
Ryu JH, Cho BO, Hwang SW, Moon SH, Kim CK, Korean J. Chem. Eng., 20(2), 407 (2003)
Sakai Y, Katsumata I, Jpn. J. Appl. Phys., 24, 337 (1985)
Schwabedissen A, Benck EC, Roberts JR, Phys. Rev. E, 55, 3450 (1997)
Talyor PA, J. Vac. Sci. Technol. A, 6, 2583 (1988)
Ulacia FJI, McVittie JP, J. Appl. Phys., 65(4), 1484 (1989)
Woodworth JR, Riley ME, Meister DC, Aragon BP, Le MS, Sawin HH, J. Appl. Phys., 80, 1304 (1996)
Woodworth JR, Riley ME, Miller PA, Hebner GA, Hamilton TW, J. Appl. Phys., 81, 5950 (1997)