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Received January 21, 2005
Accepted June 13, 2005
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Comparative Study of Diamond Films Grown on Silicon Substrate Using Microwave Plasma Chemical Vapor Deposition and Hot-Filament Chemical Vapor Deposition Technique
Mushtaq Ahmad Dar
Young-Soon Kim
Shafeeque G. Ansari
Hyung-il Kim
Gilson Khang1
Chu Van Chiem2
Hyung-Shik Shin1†
Thin Film Technology laboratory, School of Chemical Engineering, Chonbuk National University, Duck-jin gu, Chonju 561-576, Korea 1Department of Polymer/Nano Science and Technology, Chonbuk National University, Duck-jin gu, Chonju 561-576, Korea 2Institute of Materials Science, Vietnamese Academy of Science and Technology, Cau Giay District, Hanoi, Vietnam
hsshin@chonbuk.ac.kr
Korean Journal of Chemical Engineering, September 2005, 22(5), 770-773(4), 10.1007/BF02705797
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Abstract
Diamond films on the p-type Si(111) and p-type(100) substrates were prepared by microwave plasma chemical vapor deposition (MWCVD) and hot-filament chemical vapor deposition (HFCVD) by using a mixture of methane CH4 and hydrogen H2 as gas feed. The structure and composition of the films have been investigated by Xray Diffraction, Raman Spectroscopy and Scanning Electron Microscopy methods. A high quality diamond crystalline structure of the obtained films by using HFCVD method was confirmed by clear XRD-pattern. SEM images show that the prepared films are polycrystalline diamond films consisting of diamond single crystallites (111)-orientation perpendicular to the substrate. Diamond films grown on silicon substrates by using HFCVD show good quality diamond and fewer non-diamond components.
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Ansari SG, Seo HK, Kim GS, Dar MA, Shahjahan M, Shim HS, Korean J. Chem. Eng., 21(1), 262 (2004)
Bundy FP, J. Chem. Phys., 38, 631 (1963)
Chiem CV, Seo HK, Ansari SG, Kim GS, Seo JM, Shin HS, Korean J. Chem. Eng., 20(6), 1154 (2003)
Choi Y, Park YC, Kim JY, Rhee SW, Moon SH, HWAHAK KONGHAK, 32(6), 802 (1994)
Ferrari AC, Robertson J, Phys. Rev. B, 64, 075414 (2001)
Ferrari AC, Diam. Relat. Mat., 11, 1053 (2002)
Ferrari AC, Rodil SE, Robertson J, Phys. Rev. B, 15, 155306 (2003)
Kanda H, Akaishi M, Yamaoka S, Appl. Phys. Lett., 65, 784 (1994)
Lux B, Haubner R, Renard R, Diam. Relat. Mat., 1, 1035 (1992)
Petrov P, Dimitrov DB, Papadimitriou D, Beshkov G, Krastev V, Georgiev CH, Appl. Surf. Sci., 151, 233 (1999)
Shendorova OA, Zhinob VV, Brenner DW, Crit. Rev. Solid State Mat. Sci., 27, 227 (2002)
Stammler M, EisenbeiβRistein JH, Neubauer J, Gobbels M, Ley L, Diam. Relat. Mat., 11, 504 (2002)
Stephan PM, Hay RA, Dean CD, Diam. Relat. Mat., 1, 710 (1992)
Yin LW, Li MS, Zou ZD, Sun DS, Hao ZY, Gong ZG, Yao ZY, Appl. Phys. A-Mater. Sci. Process., 72, 373 (2001)
