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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received May 13, 2005
Accepted June 21, 2005

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code

Seung Taek Seo Yong Hee Lee¹ Kwang Soon Lee^† Bum Kyoo Choi² Dae Rook Yang³

Department of Chemical and Biomolecular Eng., Sogang University, 1-Shinsoodong, Mapogu, Seoul 121-742, Korea ¹LSI Division, Samsung Electronics Co., 446-711, Korea ²Department of Mechanical Eng., Sogang University, 1-Shinsoodong, Mapogu, Seoul 121-742, Korea ³Department of Chemical and Biomolecular Eng., Korea University, 1-Anamdong, Seongbukgu, Seoul 136-701, Korea

kslee@sogang.ac.kr

Korean Journal of Chemical Engineering, November 2005, 22(6), 822-829(8), 10.1007/BF02705660

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Abstract

A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

Keywords

ICP Etcher C2F6 Plasmas SiO2 Etching Run-to-Run Control

References

An KJ, Kim HS, Yoo JB, Yeom GY, Thin Solid Films, 341(1-2), 176 (1999)
Bell FH, Joubert O, Oehrlein GS, Zhang Y, Vender D, J. Vac. Sci. Technol. A, 12(6), 3095 (1994)
Booth JP, Hancock G, Perry ND, Toogood MJ, J. Appl. Phys., 66, 5251 (1989)
Christophorou LG, Olthoff JK, Rao MV, J. Phys. Chem. Ref Data, 27, 1 (1998)
Cunge G, Booth JP, J. Appl. Phys., 85, 3952 (1999)
Efremov AM, Kim DP, Kim KT, Kim CI, Vacuum, 75, 321 (2004)
Feldsien J, Kim D, Economou DJ, Thin Solid Films, 374(2), 311 (2000)
Gray DC, J. Vac. Sci. Technol. B, 11, 1243 (1993)
Hebner GA, Appl. Surf. Sci., 192, 161 (2002)
Kim WC, Chin IS, Lee KS, Choi JH, Comput. Chem. Eng., 24(8), 1815 (2000)
Kono A, Konishi M, Kato K, Thin Solid Films, 407, 198 (2000)
Lieberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John Wiley, New York, NY (1994)
Mayer TM, Baker RA, J. Electrochem. Soc., 129, 585 (1982)
Meeks E, Ho P, Thin Solid Films, 365(2), 334 (2000)
Oehrlein GS, Zhang Y, Vender D, Joubert O, J. Vac. Sci. Technol. A, 12(2), 333 (1994)
Qi S, Lifang X, Xinxin M, Mingren SM, Appl. Surf. Sci., 206, 53 (2003)
Rolland L, Peignon MC, Cardinaud Ch, Turban G, Microelectron. Eng., 53, 375 (2000)
Thomas JW, Suzuki JR, Kable SH, Steinfeld JI, J. Appl. Phys., 60, 2775 (1986)
Tserepi AD, Derouard J, Booth JP, Sadeghi N, J. Appl. Phys., 66, 2124 (1997)
Xiao H, Introduction to Semiconductor Manufacturing Technology, Prentic Hall, Upper Saddle River, New Jersey (2001)