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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received July 29, 2005
Accepted October 25, 2005

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Closed-loop identification of wafer temperature dynamics in a rapid thermal process

Wonhui Cho Thomas F. Edgar Jietae Lee^1†

Department of Chemical Engineering, University of Texas, Austin, TX78712, USA ¹Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Korea

jtlee@knu.ac.kr

Korean Journal of Chemical Engineering, March 2006, 23(2), 171-175(5), 10.1007/BF02705711

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Abstract

Single wafer rapid thermal processing (RTP) can be used for various wafer fabrication steps such as annealing, oxidation and chemical vapor deposition. A key issue in RTP is accurate temperature control i.e., the wafer temperatures should be rapidly increased while maintaining umiformity of the temperature profile. A closed-loop identification method that suppresses RTP drift effects and maintains a linear operating region during identification tests is proposed. A simple graphical identification method that can be implemented on a field controller for autotuning and a nonlinear least squares method have been investigated. Both methods are tested with RTP equipment based on a design developed by Texas Instruments.

Keywords

Rapid Thermal Process Wafer Temperature Closed-loop Identification First Order Plus Time Delay Model

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