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Language: English

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received June 17, 2005
Accepted October 17, 2005

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Multivariable controller design and numerical application

Seung Taek Seo Kwang Soon Lee^† Dae Ryook Yang¹

Department of Chemical and Biomolecular Engineering, Sogang University, 1-Shinsoodong, Mapogu, Seoul 121-742, Korea ¹Department of Chemical and Biomolecular Engineering, Korea University, 1-Anamdong, Seongbukgu, Seoul 136-701, Korea

kslee@sogang.ac.kr

Korean Journal of Chemical Engineering, March 2006, 23(2), 199-202(4), 10.1007/BF02705716

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Abstract

A model-based run-to-run control method has been devised for an inductively coupled plasma etcher and applied to a numerical process for etching SiO2 film with C2F6 plasmas. The controller was designed to minimize a quadratic cost of control error for the oxide etch rate and etch uniformity by run-wise integral action of the RF power, chamber pressure and RF bias voltage. Through numerical simulation, it was shown that the controller can truly minimize the cost even when the set point is given not to be reached by the process.

Keywords

R2R Control QILC ICP Etcher C2F6 Plasmas SiO2 Etching

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