Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received April 26, 2005
Accepted November 14, 2005
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Formation of nanodots and nanostripes of carbon nitride on silicon by plasmaand thermal treatments
School of Chemical Engineering and Technology, Nanomaterials Processing Research Center, Chonbuk National University, Jeonju 561-756, Korea 1Korea Photonics Technology Institute, 459-3 Bonchon-dong, Buk-gu, Gwangju 500-460, Korea
Korean Journal of Chemical Engineering, March 2006, 23(2), 325-328(4), 10.1007/BF02705736
Download PDF
Abstract
Amorphous carbon nitride (a-CN) films on Si(100) were grown by plasma-enhanced chemical vapor deposi-tion at room temperature, followed by H2 plasma and thermal annealing treatments, which produced densely and uni-formly distributed nanodot- and nanostripe-like structures. The as-grown CN films showed two weak emission peaksat 2.1 and 2.4eV, but the a-CN nanostructures showed a strong peak at 2.2eV.
References
Hayashi Y, Krishna KM, Ebisu H, Soga T, Umeno M, Jimbo T, Diam. Relat. Mat., 10, 1002 (2001)
Heitz T, Godet C, Bouree JE, Drevillon B, Conde JP, Phys. Rev. B, 60, 6045 (1999)
Inoue T, Ohshio S, Saitoh H, Kamata K, Appl. Phys. Lett., 67, 353 (1995)
Ju J, Xia Y, Zhang W, Wang L, Tang D, J. Non-Cryst. Solids, 278, 213 (2001)
Kim JW, Kim DO, Hahn YB, Korean J. Chem. Eng., 15(2), 217 (1998)
Kim SH, Umar A, Hahn YB, Korean J. Chem. Eng., 22(3), 489 (2005)
Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733 (2004)
Kundoo S, Chattopadhyay KK, Banerjee AN, Nandy SK, Vacuum, 69, 495 (2003)
Lim SF, Wee ATS, Lin J, Chua DHC, Huan CHA, Phys. Lett., 306, 53 (1999)
Lou HQ, Axen N, Somekh RE, Hutchings IM, Diam. Relat. Mat., 5, 1303 (1996)
Muhl S, Mendez JM, Diam. Relat. Mat., 8, 1809 (1999)
Mutsukura N, Diam. Relat. Mat., 10, 1152 (2001)
Mutsukura N, Akita KI, Diam. Relat. Mat., 8, 1720 (1999)
Klyui NI, Piryatinskii, Yu P, Semenovich VA, Mater. Lett., 35, 334 (1998)
Robertson J, Phys. Rev. B, 53, 16302 (1996)
Rusli, Amaratunga GA, Robertson J, Phys. Rev. B, 53, 16306 (1996)
Shchukin, Vitaliy A, Bimberg D, Rev. Mod. Phys., 71, 1125 (1999)
Takadoum J, Rauch JY, Cattenot JM, Martin N, Surf. Coat. Technol., 174-175, 427 (2003)
Wang JJ, de Moraes MAB, Baranauskas V, Durrant SF, Thin Solid Films, 377-378, 280 (2000)
Wei J, J. Appl. Phys., 89, 4099 (2001)
Yu GQ, Lee SH, Lee JJ, Diam. Relat. Mat., 11, 1633 (2002)
Xu W, Fujimoto T, Li B, Kojima I, Appl. Surf. Sci., 175-176, 456 (2001)
Heitz T, Godet C, Bouree JE, Drevillon B, Conde JP, Phys. Rev. B, 60, 6045 (1999)
Inoue T, Ohshio S, Saitoh H, Kamata K, Appl. Phys. Lett., 67, 353 (1995)
Ju J, Xia Y, Zhang W, Wang L, Tang D, J. Non-Cryst. Solids, 278, 213 (2001)
Kim JW, Kim DO, Hahn YB, Korean J. Chem. Eng., 15(2), 217 (1998)
Kim SH, Umar A, Hahn YB, Korean J. Chem. Eng., 22(3), 489 (2005)
Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733 (2004)
Kundoo S, Chattopadhyay KK, Banerjee AN, Nandy SK, Vacuum, 69, 495 (2003)
Lim SF, Wee ATS, Lin J, Chua DHC, Huan CHA, Phys. Lett., 306, 53 (1999)
Lou HQ, Axen N, Somekh RE, Hutchings IM, Diam. Relat. Mat., 5, 1303 (1996)
Muhl S, Mendez JM, Diam. Relat. Mat., 8, 1809 (1999)
Mutsukura N, Diam. Relat. Mat., 10, 1152 (2001)
Mutsukura N, Akita KI, Diam. Relat. Mat., 8, 1720 (1999)
Klyui NI, Piryatinskii, Yu P, Semenovich VA, Mater. Lett., 35, 334 (1998)
Robertson J, Phys. Rev. B, 53, 16302 (1996)
Rusli, Amaratunga GA, Robertson J, Phys. Rev. B, 53, 16306 (1996)
Shchukin, Vitaliy A, Bimberg D, Rev. Mod. Phys., 71, 1125 (1999)
Takadoum J, Rauch JY, Cattenot JM, Martin N, Surf. Coat. Technol., 174-175, 427 (2003)
Wang JJ, de Moraes MAB, Baranauskas V, Durrant SF, Thin Solid Films, 377-378, 280 (2000)
Wei J, J. Appl. Phys., 89, 4099 (2001)
Yu GQ, Lee SH, Lee JJ, Diam. Relat. Mat., 11, 1633 (2002)
Xu W, Fujimoto T, Li B, Kojima I, Appl. Surf. Sci., 175-176, 456 (2001)
