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Received August 2, 2005
Accepted October 29, 2005
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Electrical properties of (Bi3.5La0.5)Ti3O12 thin-films prepared by liquid sourcemisted chemical deposition
Memory TG-2 process Team, R&D Division, Hynix Semiconductor Inc., #1 Hyangjeong-dong, Hungduk-gu, Cheongju-si 361-725, Korea 1Semiconductor R&D center, Samsung electronics Co. Ltd., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do 449-900, Korea 2Department of Chemical and Biomolecular Engineering & Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
siwoo@kaist.ac.kr
Korean Journal of Chemical Engineering, March 2006, 23(2), 329-332(4), 10.1007/BF02705737
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Abstract
The (Bi3.5La0.5)Ti3O12 (BLT) thin-films used in this study were fabricated on a Pt(111)/SiO2/Si(100) sub-strate by a Liquid Source Misted Chemical Deposition (LSMCD) technique. X-ray diffraction patterns showed thatthe BLT films were crystallized and no other phases were observed when annealed above 650oC. Grain size and remnantpolarizations increased with increase in the annealing temperature, while leakage current densities decreased. The remnant polarizations (Pr) increased from 2.0 to 4.8 and 19.0μC/cm2 with increase in the annealing temperature from 650to 700 and 750oC, respectively. The BLT films annealed at 700oC in O2 showed a good fatigue resistance of reducedpolarization by 10% after 109 switching cycles when 9V of bipolar voltage was applied at a frequency of 40kHz.
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References
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Yamamuka M, Kawahara T, Horikawa T, Ono K, Jpn. J. Appl. Phys., 36, 2555 (1997)
