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Language: English

Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received August 23, 2023
Accepted August 23, 2023

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Retraction: "Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor" [Korean J. Chem. Eng., 21(1), 257 (2004)]

Tae Yun Kim Sang Hyun Lee¹ Young Hwan Mo Hyun Wook Shim² Kee Suk Nahm^† Eun-Kyung Suh² Gyung Soo Park¹

School of Chemical Engineering and Technology, Chonbuk National University, Jeonju 561-756, Korea ¹FED Project Team, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea ²Department of Semiconductor Science and Technology, Chonbuk National University, Jeonju 561-756, Korea

nahmks@moak.chonbuk.ac.kr

Korean Journal of Chemical Engineering, November 2006, 23(6), 1068-1068(1), 10.1007/s11814-006-0032-0

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