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Received June 1, 2006
Accepted September 21, 2006
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Numerical simulation on silane plasma chemistry in pulsed plasma process to prepare a-Si :H thin films
Department of Chemical Engineering, Kangwon National University, Chuncheon, Gangwon-do 200-701, Korea 1Department of Environmental Engineering, KyungPook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
Korean Journal of Chemical Engineering, January 2007, 24(1), 154-164(11), 10.1007/s11814-007-5025-0
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Abstract
We numerically calculated the effects of pulse modulation (plasma-on and -off times) on the concentration changes of the chemical species (SiH4, SiHx, SiHx+ and polymerized negative ions) and also the growth rate of a-Si : H thin films in the pulsed SiH4 plasmas. During the plasma-on, SiHx is generated quickly by a fast dissociative reaction of SiH4, but, during plasma-off, SiHx disappears rapidly by a reaction with hydrogen and also by the deposition onto the reactor wall. During the plasma-on, the negative ions are polymerized by the reactions with SiH4, but, during the plasma-off, they disappear by neutralization reactions with positive ions. As the plasma-on time increases or as the plasma-off time decreases, the time-averaged concentrations of SiHx and negative ions and also the time-averaged film growth rate increase. This study shows quantitatively that polymerized negative ions, which are not considered to be preferred precursors for the high-quality thin films, can be efficiently reduced by the pulsed plasma process.
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References
Anders A, Surf. Coat. Technol., 183, 301 (2004)
Ashida S, Lieberman MA, Jpn. J. Appl. Phys., 36, 854 (1997)
Chen FF, Introduction to plasma physics and controlled fusion, 2nd Ed., Plenum press, New York (1984)
Courteille C, Dorier JL, Hollenstein Ch, Sansonnens L, Howling AA, Plasma Sources Sci. Technol., 5, 210 (1996)
Danckwerts PV, Chem. Eng. Sci., 2, 1 (1953)
Fridman AA, Boufendi L, Hbid T, Potapkin BV, Bouchoule A, J. Appl. Phys., 79(3), 1303 (1996)
Fukuzawa T, Kushima S, Matsuoka Y, Shiratani M, Watanabe Y, J. Appl. Phys., 86(7), 3543 (1999)
Graves DB, Plasma IEEE Trans. on Plasma Sci., 62(1), 88 (1987)
Graves DB, Jensen KF, Plasma IEEE Trans. on Plasma Sci., 14(2), 78 (1986)
Howling AA, Sansonnens L, Dorier JL, Hollenstein C, J. Appl. Phys., 75, 1340 (1994)
Howling AA, Courteille C, Dorier JL, Sansonnens L, Hollenstein C, Pure Appl. Chem., 68(5), 1017 (1996)
Itagaki N, Fukuda A, Yoshizawa T, Shindo M, Ueda Y, Kawai Y, Surf. Coat. Technol., 131, 54 (2000)
Kim KS, Ikegawa M, Plasma Sources Sci. Technol., 5, 311 (1996)
Kim DJ, Kim KS, Jpn. J. Appl. Phys., 36, 4989 (1997)
Kim DJ, Kim KS, Aerosol Sci. Technol., 32, 293 (2000)
Kim KS, Kim DJ, J. Appl. Phys., 87(6), 2691 (2000)
Kim DJ, Kim KS, AIChE J., 48(11), 2499 (2002)
Kim DJ, Kim KS, Korean J. Chem. Eng., 19(3), 495 (2002)
Kim DJ, Kim KS, Zhao QQ, J. Nanopart. Res., 5, 221 (2003)
Kim KS, Kim DJ, Yoon JH, Park JY, Watanabe Y, Shiratani M, J. Colloid Interface Sci., 257(2), 195 (2003)
Kim DJ, Lyoo PJ, Kim KS, Korean J. Chem. Eng., 20(2), 392 (2003)
Kim DJ, Kim KS, Ind. Eng. Chem. Res., 44(21), 7907 (2005)
Kirimura H, Maeda H, Murakami H, Nakahigashi T, Ohtani S, Tabata, T., Hayashi T, Kobayashi M, Mitsuda Y, Nakamura N, Kuwahara H, Doi A, Jpn. J. Appl. Phys., 33, 4389 (1994)
Koga K, Kaguchi N, Shiratani M, Watanabe Y, J. Vac. Sci. Technol. A, 22, 1536 (2004)
Koga K, Kai M, Shiratani M, Watanabe Y, Shikatani N, Jpn. J. Appl. Phys., 41, l168 (2002)
Kushner MJ, J. Appl. Phys., 63, 2532 (1988)
Maemura Y, Fujiyama H, Takagi T, Hayashi R, Futako W, Kondo M, Matsuda A, Thin Solid Films, 345(1), 80 (1999)
Madan A, Morrison S, Sol. Energy Mater. Sol. Cells, 55(1), 127 (1998)
Madan A, Morrison S, Kuwahara H, Sol. Energy Mater. Sol. Cells, 59(1), 51 (1999)
Meyyappan M, J. Vac. Sci. Technol. A, 14(4), 2122 (1996)
Midha V, Economou DJ, Plasma Sources Sci. Technol., 9, 256 (2000)
Ramamurthi B, Economou DJ, J. Vac. Sci. Technol. A, 20(2), 467 (2002)
Reid RC, Prusniz JH, Sherwood TK, The properties of gases and liquids, 3rd Ed., McGraw-Hill, New York (1977)
Sato N, Tagashira H, IEEE Trans. Plasma Sci., 19(2), 102 (1991)
Shiratani M, Fukuzawa T, Watanabe Y, Jpn. J. Appl. Phys., 38, 4542 (1999)
Watanabe Y, Shiratani M, Koga K, Pure Appl. Chem., 74(3), 483 (2002)
Ashida S, Lieberman MA, Jpn. J. Appl. Phys., 36, 854 (1997)
Chen FF, Introduction to plasma physics and controlled fusion, 2nd Ed., Plenum press, New York (1984)
Courteille C, Dorier JL, Hollenstein Ch, Sansonnens L, Howling AA, Plasma Sources Sci. Technol., 5, 210 (1996)
Danckwerts PV, Chem. Eng. Sci., 2, 1 (1953)
Fridman AA, Boufendi L, Hbid T, Potapkin BV, Bouchoule A, J. Appl. Phys., 79(3), 1303 (1996)
Fukuzawa T, Kushima S, Matsuoka Y, Shiratani M, Watanabe Y, J. Appl. Phys., 86(7), 3543 (1999)
Graves DB, Plasma IEEE Trans. on Plasma Sci., 62(1), 88 (1987)
Graves DB, Jensen KF, Plasma IEEE Trans. on Plasma Sci., 14(2), 78 (1986)
Howling AA, Sansonnens L, Dorier JL, Hollenstein C, J. Appl. Phys., 75, 1340 (1994)
Howling AA, Courteille C, Dorier JL, Sansonnens L, Hollenstein C, Pure Appl. Chem., 68(5), 1017 (1996)
Itagaki N, Fukuda A, Yoshizawa T, Shindo M, Ueda Y, Kawai Y, Surf. Coat. Technol., 131, 54 (2000)
Kim KS, Ikegawa M, Plasma Sources Sci. Technol., 5, 311 (1996)
Kim DJ, Kim KS, Jpn. J. Appl. Phys., 36, 4989 (1997)
Kim DJ, Kim KS, Aerosol Sci. Technol., 32, 293 (2000)
Kim KS, Kim DJ, J. Appl. Phys., 87(6), 2691 (2000)
Kim DJ, Kim KS, AIChE J., 48(11), 2499 (2002)
Kim DJ, Kim KS, Korean J. Chem. Eng., 19(3), 495 (2002)
Kim DJ, Kim KS, Zhao QQ, J. Nanopart. Res., 5, 221 (2003)
Kim KS, Kim DJ, Yoon JH, Park JY, Watanabe Y, Shiratani M, J. Colloid Interface Sci., 257(2), 195 (2003)
Kim DJ, Lyoo PJ, Kim KS, Korean J. Chem. Eng., 20(2), 392 (2003)
Kim DJ, Kim KS, Ind. Eng. Chem. Res., 44(21), 7907 (2005)
Kirimura H, Maeda H, Murakami H, Nakahigashi T, Ohtani S, Tabata, T., Hayashi T, Kobayashi M, Mitsuda Y, Nakamura N, Kuwahara H, Doi A, Jpn. J. Appl. Phys., 33, 4389 (1994)
Koga K, Kaguchi N, Shiratani M, Watanabe Y, J. Vac. Sci. Technol. A, 22, 1536 (2004)
Koga K, Kai M, Shiratani M, Watanabe Y, Shikatani N, Jpn. J. Appl. Phys., 41, l168 (2002)
Kushner MJ, J. Appl. Phys., 63, 2532 (1988)
Maemura Y, Fujiyama H, Takagi T, Hayashi R, Futako W, Kondo M, Matsuda A, Thin Solid Films, 345(1), 80 (1999)
Madan A, Morrison S, Sol. Energy Mater. Sol. Cells, 55(1), 127 (1998)
Madan A, Morrison S, Kuwahara H, Sol. Energy Mater. Sol. Cells, 59(1), 51 (1999)
Meyyappan M, J. Vac. Sci. Technol. A, 14(4), 2122 (1996)
Midha V, Economou DJ, Plasma Sources Sci. Technol., 9, 256 (2000)
Ramamurthi B, Economou DJ, J. Vac. Sci. Technol. A, 20(2), 467 (2002)
Reid RC, Prusniz JH, Sherwood TK, The properties of gases and liquids, 3rd Ed., McGraw-Hill, New York (1977)
Sato N, Tagashira H, IEEE Trans. Plasma Sci., 19(2), 102 (1991)
Shiratani M, Fukuzawa T, Watanabe Y, Jpn. J. Appl. Phys., 38, 4542 (1999)
Watanabe Y, Shiratani M, Koga K, Pure Appl. Chem., 74(3), 483 (2002)
