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Received June 7, 2006
Accepted October 9, 2006
- This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Heat transfer behavior of high-power light-emitting diode packages
School of Chemical Engineering and Technology, Chonbuk National University, Jeonju 561-756, Korea 1Korea Institute of Energy Research, Daejeon 305-343, Korea
Korean Journal of Chemical Engineering, March 2007, 24(2), 197-203(7), 10.1007/s11814-007-5056-6
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Abstract
Heat transfer characteristics of a high-power light-emitting diode (HPLED) have been carried out in terms of experiment and simulation. Finite volume method was used to analyze the temperature and thermal stress distributions in the HPLED package as a function of drive current and package structure. Predicted temperatures of silicone encapsulant and epoxy resin showed a good agreement with measured temperatures. The thermal stress increased with the drive current due to a heat burden. The intersection edges between the light emitting diode chip and the silicone encapsulant showed a higher thermal stress. The thermal stress of Cu-thin-film coated package was lower than that of other package structures because of an efficient cooling effect.
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