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Received July 14, 2006
Accepted March 10, 2007
- This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Growth of ZnO nanoneedles on silicon substrate by cyclic feeding chemical vapor deposition: Structural and optical properties
School of Semiconductor and Chemical Engineering, and Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561-756, Korea
Korean Journal of Chemical Engineering, November 2007, 24(6), 1084-1088(5), 10.1007/s11814-007-0125-4
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Abstract
Well-crystallized ZnO nanoneedles were grown on Au-coated Si(100) substrate by cyclic feeding chemical vapor deposition (CFCVD) process using diethyl zinc and oxygen as precursors for zinc and oxygen, respectively. Morphological investigations revealed that the as-grown nanoneedles exhibited sharpened tips and wider bases, having the typical diameters at their bases and tips, 60±10 nm and 20±10 nm, respectively. Detailed structural characterizations confirmed that the as-grown products were single crystalline with a wurtzite hexagonal phase and were grown preferentially along the [0001] direction. The room-temperature photoluminescence (PL) spectrum showed a strong and sharp UV emission at 378 nm with a very weak, suppressed and broad green emission at 520 nm, substantiating good optical properties for the as-grown ZnO nanoneedles.
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Yang JL, An SJ, Park WI, Yi GC, Choi W, Adv. Mater., 16, 1661 (2004)
Park WI, Yi GC, Kim MY, Pennycook SJ, Adv. Mater., 14(24), 1841 (2002)
Li YB, Bando Y, Golberg D, Appl. Phys. Lett., 84, 3603 (2004)
Zhang HZ, Wang RM, Zhu YW, J. Appl. Phys., 96, 624 (2004)
Zhang J, Yang Y, Jiang F, Li J, Physica E, 27, 302 (2005)
Deheer WA, Chatelain A, Ugarte D, Science, 270(5239), 1179 (1995)
Gerthsen D, Litvinov D, Gruber T, Kirchner C, Waag A, Appl. Phys. Lett., 81, 3972 (2002)
Vanheusden K, Seager CH, Warren WL, Tallant DR, Voigt JA, J. Appl. Phys., 79, 7983 (1996)
Bagnall DM, Chen YF, Shen MY, Zhu Z, Goto T, Yao T, J. Cryst. Growth, 185, 605 (1998)
Wagner RS, Ellis WC, Appl. Phys. Lett., 4, 89 (1964)
Duan XF, Lieber CM, J. Am. Chem. Soc., 122(1), 188 (2000)
Gao PX, Wang ZL, J. Phys. Chem. B, 108(23), 7534 (2004)
Zhao DX, Andreazza C, Andreazza P, Ma JG, Liu YC, Shen DZ, Chem. Phys. Lett., 399(4-6), 522 (2004)