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- In relation to this article, we declare that there is no conflict of interest.
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Received June 25, 2007
Accepted July 24, 2007
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Copyright © KIChE. All rights reserved.
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Highly selective modification of silicon oxide structures fabricated by an AFM anodic oxidation
School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Korea
Korean Journal of Chemical Engineering, March 2008, 25(2), 386-389(4), 10.1007/s11814-008-0065-7
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Abstract
Anodic oxidation via atomic force microscopy is a promising method for creating submicron-sized silicon dioxide patterns on a local surface. The area patterned by AFM anodic oxidation (AAO) has different chemical properties from the non-patterned area, and thus site-selective modification of patterned surfaces is quite possible. In this study, we combined the AAO with self-assembly method and/or wet chemical etching method for the fabrication of positive and/or negative structures. These locally modified surfaces could be used to the site-selective arrangement and integration of various materials based on a pre-described pattern.
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References
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Irmer B, Blick RH, Simmel F, Godel W, Lorenz H, Kotthaus JP, Appl. Phys. Lett., 73, 2051 (1998)
Snow ES, Juan WH, Pang SW, Campbell PM, Appl. Phys. Lett., 66, 1729 (1995)
Choi I, Kang SK, Lee J, Kim Y, Yi J, Biomaterials, 27, 4655 (2006)
Irene FC, Xavier B, Francesc PM, Nanotechnology, 16, 2731 (2005)
Kim Y, Choi I, Kang SK, Choi K, Yi J, Microelectron. Eng., 81, 341 (2005)
Avouris P, Hertel T, Martel R, Appl. Phys. Lett., 71, 285 (1997)
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Choi I, Kim Y, Kang SK, Lee J, Yi J, Langmuir, 22(11), 4885 (2006)
Luo G, Xie G, Zhang Y, Zhang G, Zhang Y, Carlberg P, Zhu T, Liu Z, Nanotechnology, 17, 3018 (2006)
