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Received July 3, 2007
Accepted December 12, 2007
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Silicon oxidation by aerial diffusion of active oxygen species from UV-irradiated TiO2
Department of Chemical Engineering, Kangwon National University, Chuncheon 200-701, Korea
wglee@kangwon.ac.kr
Korean Journal of Chemical Engineering, July 2008, 25(4), 881-884(4), 10.1007/s11814-008-0145-8
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Abstract
Silicon oxidation by the aerial diffusion of active oxygen species from a UV-irradiated TiO2 surface was evaluated and characterized. The key point was to confirm the oxidation possibility of inorganic materials such as silicon under a photocatalytic remote scheme. In this study, it was confirmed that the remote oxidation of silicon substrates would occur by the aerial diffusion of active oxygen species from UV-irradiated TiO2 surfaces, and that the oxides have comparable properties to the thermally grown oxide. Remote oxidation using UV-irradiated TiO2 is shown to be a viable alternative method for the fabrication of nano-scale silicon oxide.
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Tatsuma T, Tachibana S, Miwa T, Tryk DA, Fujishima A, J. Phys. Chem. B, 103(38), 8033 (1999)
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Haick H, Paz Y, J. Phys. Chem. B, 105(15), 3045 (2001)
Cho S, Choi W, J. Photochem. Photobiol. A-Chem., 143, 221 (2001)
Ishikawa Y, Matsumoto Y, Nishida Y, Taniguchi S, Watanabe J, J. Am. Chem. Soc., 125(21), 6558 (2003)
Lee NC, Choi WY, J. Phys. Chem. B, 106(45), 11818 (2002)
Lee S, McIntyre S, Mills A, J. Photochem. Photobiol. A-Chem., 162, 203 (2004)
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Park JS, Choi W, Langmuir, 20(26), 11523 (2004)
Zhang JY, Boyd IW, Appl. Surf. Sci., 186(1-4), 64 (2002)
