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Received January 29, 2008
Accepted March 25, 2008
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Effects of silyl concentration, hydrogen concentration, ion flux, and silyl surface diffusion length on microcrystalline silicon film growth
1School of Chemistry and Chemical Engineering, Xinxiang University, Xinxiang, 453000, China 2School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450052, China 3Physics Department, Xinxiang University, Xinxiang, 453000, China
jxlu2000@163.com
Korean Journal of Chemical Engineering, November 2008, 25(6), 1539-1545(7), 10.1007/s11814-008-0253-5
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Abstract
Two sets of μc-Si : H films as a function of pressure were fabricated by very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Deposition rate, Raman crystallinity, and photo/dark conductivity were investigated under both low and high power conditions. A plasma fluid model and a surface hydride-dependent precursor diffusion model were constructed to understand the evolution of microcrystalline silicon under low and high power conditions. Silyl, hydrogen, ion flux, silyl surface diffusion length are believed to have much influence on film_x000D_
growth rate, crystallinity and photo electronic properties. But the interesting point is that under a certain condition one or more of these parameters dominate μc-Si : H growth, while other parameters have weak influence. Short-life radicals are found to be the possible major factor on the deterioration of photo sensitivity of μc-Si : H films.
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Haaland P, J. Chem. Phys., 93, 4066 (1990)
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Perrin J, Leroy O, Bordage MC, Contrib. Plasma Phys., 36, 3 (1996)
Hickman AP, J. Chem. Phys., 70, 4872 (1979)
Ganguly G, Matsuda A, Phys. Rev. B, 47, 3661 (1993)
Matsuda A, Thin Solid Films, 337(1-2), 1 (1999)
Guizot JL, Nomoto K, Matsuda A, Surface Science, 244, 22 (1991)
Maeda K, Kuroe A, Umezu I, Phys. Rev. B, 51, 10635 (1995)
Gerbi JE, Abelson JR, J. Appl. Phys., 89, 1463 (2001)
Gallagher A, J. Appl. Phys., 60, 1369 (1986)
Perrin J, J. Non-Cryst. Solids, 137, 639 (1991)
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Bray KR, Parsons GN, Phys. Rev. B, 65, 035311 (2001)
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Doren DJ, Advances in chemical physics, John Wiley & Sons Inc, New York (1996)
Heintze M, Zedlitz R, Bauer GH, J. Phys. D: Appl. Phys., 26, 1781 (1993)
Robertson J, J. Appl. Phys., 87, 2608 (2000)
Heintze M, Zedlitz R, J. of Non-cryst. Solids, 198-200, 1038 (1996)
