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Received April 29, 2008
Accepted June 21, 2008
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Thin film silver deposition by electroplating for ULSI interconnect applications
Research Center for Energy Conversion and Storage, School of Chemical and Biological Engineering, Seoul National University, San 56-1, Shillim-dong, Gwanak-gu, Seoul 151-742, Korea 1Center for Fuel Cell Research, Korea Institute of Science and Technology, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Korea 2Department of Mechanical Engineering, University of Incheon, 319 Incheondaegil, Nam-gu, Incheon 402-749, Korea
jjkimm@snu.ac.kr
Korean Journal of Chemical Engineering, January 2009, 26(1), 265-268(4), 10.1007/s11814-009-0045-6
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Abstract
Ag seed layers were pretreated with 1 : 1,000 diluted nitric acid cleaning solution for 60 s to obtain a clean and oxide-free Ag surface. When an applied potential was less than .800 mV in Ag electroplating, the deposition rate was over 2,000 A/min and the resistivity of Ag deposit was 1.80 μΩ·cm. But the deposit film became rougher with a negative increase in the potential, and it was also observed through measuring the double layer capacitance. The resistivity of Ag film annealed at 350 ℃ for 30 min was decreased from 1.80 μΩ·cm to 1.67 μΩ·cm and the agglomeration of Ag grains was not observed on the surface of the annealed Ag films. To reduce the surface roughness, thiourea was added in the electrolyte and it was decreased below 15 nm.
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References
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Hong CY, Peng YC, Chen LJ, Hsieh WY, Hsieh YF, J. Vac. Sci. Technol. A, 17(4), 1911 (1999)
Yuan Z, Dryden NH, Vittal JJ, Puddephatt RJ, Chem. Mater., 7, 1696 (1995)
Zaplatynsky OV, Prots YM, Salamakha PS, Muratova LO, Bodak OI, J. Alloys Compd., 232, L1 (1996)
Nakamura K, Olowolafe JO, Lau SS, Nicolet MA, Mayer JW, Shima R, J. Appl. Phys., 47, 1278 (1976)
Alford TL, Zeng Y, Nguyen P, Chen L, Mayer JW, Microelectron. Eng., 55, 389 (2001)
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Reents B, Plieth W, Macagno VA, Lacconi GI, J. Electroanal. Chem., 453(1-2), 121 (1998)
