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- In relation to this article, we declare that there is no conflict of interest.
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Received August 5, 2008
Accepted September 3, 2008
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Copyright © KIChE. All rights reserved.
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Enhanced light emission of nano-patterned GaN via block copolymer thin films
Yo-Han Cho
Kyunghee Lee
Kyunghoon Kim
Kwang Hyun Baik1
Jinhan Cho2
Jihyun Kim3
Kyusoon Shin†
Joona Bang3†
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea 1Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do 446-712, Korea 2School of Advanced Materials Engineering, Kookmin University, Seoul 136-70, Korea 3Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Korea
shin@snu.ac.kr
Korean Journal of Chemical Engineering, January 2009, 26(1), 277-280(4), 10.1007/s11814-009-0047-4
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Abstract
Abstract.We demonstrate that the nanoscopic block copolymer patterns on GaN can enhance light extraction efficiency of GaN-based light emitting diodes. Nanoporous patterns were fabricated on a bare GaN substrate via self-assembly of poly(styrene-b-methyl methacrylate) block copolymers from which PMMA microdomains were selectively removed later on. A bare GaN surface was treated with a photo-crosslinkable thin layer of poly(styrene-r-methyl_x000D_
methacrylate) random copolymers to tune the cylindrical microdomain orientations. The nanoporous block copolymer thin film was controlled to be thicker than its typical repeat period in bulk by incorporating PMMA homopolymer into block copolymer. Consequently, the light extraction efficiency in photoluminescence spectra could be tuned with the thickness of nanopatterned thin film on GaN.
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Morkoc H, Nitride semiconductors and devices, Springer, Heidelberg (1999)
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Fujii T, Gao Y, Sharma R, Hu EL, Denbaars SP, Nakamura S, Appl. Phys. Lett., 84, 855 (2004)
Kim DH, Cho CO, Roh YG, Jeon H, Park YS, Cho J, Lim JS, Sone C, Park Y, Choi WJ, Park QH, Appl. Phys. Lett., 87, 203508 (2005)
Kim K, Choi J, Bae TS, Appl. Phys. Lett., 90, 18192 (2007)
Park M, Harrison C, Chaikin PM, Register RA, Adamson DH, Science, 276(5317), 1401 (1997)
Black CT, Guarini KW, Milkove KR, Baker SM, Russell TR, Tuominen MT, Appl. Phys. Lett., 79, 409 (2001)
Kim HC, Jia X, Stafford CM, Kim DH, McCarthy TJ, Tuominen M, Hawker CJ, Russell TP, Adv. Mater., 19, 795 (2001)
Shin K, Leach KA, Goldbach JT, Kim DH, Jho JY, Tuominen M, Hawker CJ, Russell TP, Nano. Lett., 2, 933 (2002)
Huang E, Pruzinsky S, Russell TP, Mays J, Hawker CJ, Macromolecules, 32(16), 5299 (1999)
Mansky P, Liu Y, Huang E, Russell TP, Hawker C, Science, 275(5305), 1458 (1997)
Bang J, Bae J, Lowenhielm P, Spiessberger C, Given-Beck SA, Russell TP, Hawker CJ, Adv. Mater., 19, 4552 (2007)
Thurn-Albrecht T, Schotter J, Kastle GA, Emley N, Shibauchi T, Krusin-Elbaum L, Guarini K, Black CT, Tuominen MT, Russell TP, Science, 290, 2126 (2000)
Kim SH, Misner MJ, Xu T, Kimura M, Russell TP, Adv. Mater., 16(3), 226 (2004)
Kim YW, Kim JJ, Kim YH, Korean J. Chem. Eng., 20(6), 1158 (2003)
Won YY, Korean J. Chem. Eng., 21(1), 296 (2004)
Gombert A, Glaubitt W, Rose K, Dreibholz J, Blasi B, Heinzel A, Sporn D, Doll W, Wittwer V, Thin Solid Films, 351(1-2), 73 (1999)
Jeong U, Ryu DY, Kho DH, Kim JK, Goldbach JT, Kim DH, Russell TP, Adv. Mater., 16(6), 533 (2004)
