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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received November 19, 2007
Accepted September 3, 2008

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Iterative identification of temperature dynamics in single wafer rapid thermal processing

Wonhui Cho Thomas F. Edgar Jietae Lee^1†

Department of Chemical Engineering, University of Texas, Austin, TX78712, U.S.A., USA ¹Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Korea

jtlee@knu.ac.kr

Korean Journal of Chemical Engineering, March 2009, 26(2), 307-312(6), 10.1007/s11814-009-0053-6

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Abstract

As the standard size of silicon wafers grows and performance specifications of integrated circuits become more demanding, a better control system to improve the processing time, uniformity and repeatability in rapid thermal processing (RTP) is needed. Identification and control are complicated because of nonlinearity, drift and the time-varying nature of the wafer dynamics. Various physical models for RTP are available. For control system design they can be_x000D_ approximated by diagonal nonlinear first order dynamics with multivariable static gains. However, these model structures of RTP have not been exploited for identification and control. Here, an identification method that iteratively updates the multivariable static gains is proposed. It simplifies the identification procedure and improves the accuracy of the identified model, especially the static gains, whose accurate identification is very important for better control.

Keywords

Temperature Control Rapid Thermal Processing Single Wafer Iterative Identification Nonlinear Model Identification

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