Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received August 26, 2008
Accepted November 12, 2008
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Film properties of nitrogen-doped polycrystalline silicon for advanced gate material
Department of Chemical Engineering and Division of Energy Systems Research, Ajou University, San 5 Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea 1Eugene Technology Co. Ltd., 209-3 Chuge-ri, Yangji-myun, Yongin 449-824, Korea
changkoo@ajou.ac.kr
Korean Journal of Chemical Engineering, May 2009, 26(3), 824-827(4), 10.1007/s11814-009-0137-3
Download PDF
Abstract
Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH3/SiH4 ratio such that they decreased with increasing NH3/SiH4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH3/SiH4 ratio, the size of the grains was decreased and the grains size distribution became uniform. Finally, we successfully obtained N-doped poly-Si films having uniform grain size of approximately 6 nm.
References
Luoh T, Han TT, Yang YC, Chen KC, Shih HH, Hwang YL, Hsueh CC, IEEE Trans. Semicond. Manuf., 16, 155 (2003)
Song YS, Chung CW, Korean J. Chem. Eng., 20(6), 1138 (2003)
Mori S, Yamaguchi Y, Sato M, Meguro H, Tsunda H, Kamiya E, Yoshikawa K, Arai N, Sakagami E, IEEE Trans. Electron Devices, 43, 47 (1996)
Nkansah FD, Hatalis M, IEEE Trans. Electron Devices, 46, 1355 (1999)
Muramatsu S, Kubota T, Nishio N, Shirai H, Matsuo M, Kodama N, Horikawa M, Saito S, Arai K, Okazawa T, IEDM Tech. Dig., 847 (1994)
Togo M, Suzuki T, Hasegawa E, Koyama S, Fukai T, Sakakidani A, Miyake S, Watanabe T, Yamamoto I, Tanaka M, Kawashima Y, Kunimune Y, Ikeda M, Imai K, 2006 Symp. VLSI Tech. Dig. Technical Papers, 30 (2006)
Um PY, Korean patent, 10-2004-0063047 (2004)
Farrow RFC, J. Electrochem. Soc., 121, 899 (1974)
Temple-Boyer P, Jalabert L, Masarotto L, Alay JL, Morante JR, J. Vac. Sci. Technol. A, 18(5), 2389 (2000)
Scheid E, Kouassi LK, Henda R, Samitier J, Morante JR, Mater. Sci. Eng. B, 17, 72 (1993)
Cullity BD, in Elements of X-ray diffraction, Cohen M, Editor, Addison-Wesley, Reading, MA (1978)
Song YS, Chung CW, Korean J. Chem. Eng., 20(6), 1138 (2003)
Mori S, Yamaguchi Y, Sato M, Meguro H, Tsunda H, Kamiya E, Yoshikawa K, Arai N, Sakagami E, IEEE Trans. Electron Devices, 43, 47 (1996)
Nkansah FD, Hatalis M, IEEE Trans. Electron Devices, 46, 1355 (1999)
Muramatsu S, Kubota T, Nishio N, Shirai H, Matsuo M, Kodama N, Horikawa M, Saito S, Arai K, Okazawa T, IEDM Tech. Dig., 847 (1994)
Togo M, Suzuki T, Hasegawa E, Koyama S, Fukai T, Sakakidani A, Miyake S, Watanabe T, Yamamoto I, Tanaka M, Kawashima Y, Kunimune Y, Ikeda M, Imai K, 2006 Symp. VLSI Tech. Dig. Technical Papers, 30 (2006)
Um PY, Korean patent, 10-2004-0063047 (2004)
Farrow RFC, J. Electrochem. Soc., 121, 899 (1974)
Temple-Boyer P, Jalabert L, Masarotto L, Alay JL, Morante JR, J. Vac. Sci. Technol. A, 18(5), 2389 (2000)
Scheid E, Kouassi LK, Henda R, Samitier J, Morante JR, Mater. Sci. Eng. B, 17, 72 (1993)
Cullity BD, in Elements of X-ray diffraction, Cohen M, Editor, Addison-Wesley, Reading, MA (1978)
