Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received March 9, 2009
Accepted July 22, 2009
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Synthesis and optimization of porous anodic aluminum oxide nano-template for large area device applications
1School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan 712-749, Korea 2Department of Nanomaterial Chemistry, College of Science & Technology, Dongguk University, Gyeongju 780-714, Korea 3Department of Chemical Engineering, Sungkyunkwan University, Suwon 446-740, Korea
Korean Journal of Chemical Engineering, November 2009, 26(6), 1785-1789(5), 10.1007/s11814-009-0336-y
Download PDF
Abstract
A simplified anodized aluminum oxide (AAO) nano-template fabrication process was developed in this study, which can be suited for the large area device applications. The pores of various sizes and depths were realized from the thin (less than 1 μm) aluminum film deposited on the sapphire substrate. The optimum morphological structure was obtained by adjusting the applied voltage, types of acid solution, its concentration and temperature which has evolved after two phases of anodization followed by chemical etching. The Ar plasma pre-treatment method was developed and applied to improve the surface roughness of thin aluminum film without severely sacrificing the deposited layer thickness.
References
Jeong SH, Jung SH, Lee KH, J. Korean Ind. Eng. Chem., 16(4), 461 (2005)
Park J, Ryu SW, Mulli S, Korean Phys. Soc., 52, 232 (2006)
Tamura H, Shirish K, Takayangi H, Jpn. J. Appl. Phys., 39, 241 (2000)
Schmidt OG, Jin-Phillipp NY, Lange C, Denker U, Eberl K, Schreiner R, Grabeldinger H, Schweizer H, Appl. Phys. Lett., 77, 4139 (2000)
Li Q, Han SM, Brueck SRJ, Hersee S, Jiang YB, Xu H, Appl. Phys. Lett., 83, 5032 (2003)
Austin MD, Ge H, Wu W, Li M, Yu Z, Wasserman D, Lyon SA, Chou SY, Appl. Phys. Lett., 84, 5299 (2004)
Chik H, Liang J, Cloutier SG, Kouklin N, Xu JM, Appl. Phys. Lett., 84, 3376 (2004)
Hu W, Gong D, Chen Z, Yuan L, Saito K, Grimes CA, Kichambare P, Appl. Phys. Lett., 79, 3083 (2001)
Hu W, Yuan L, Chen Z, Gong D, Satio K, J. Nanosci. Nanotech., 2, 1 (2002)
Jeong SH, Lee KH, Synth. Metals, 139, 385 (2003)
Hwang SK, Jeong SH, Hwang HY, Lee OJ, Lee KH, Korean J. Chem. Eng., 19(3), 467 (2002)
Virk RS, Study of Voltage, Acid Concentration, and Temperature on Nanopore Attributes of Anodized Aluminum (San Jose State Univ. San Jose, 2005) pp.3-4
Parkhutik VP, Shershulsky VI, J. Phys. D: Appl. Phys., 25, 258 (1992)
Park J, Ryu SW, Mulli S, Korean Phys. Soc., 52, 232 (2006)
Tamura H, Shirish K, Takayangi H, Jpn. J. Appl. Phys., 39, 241 (2000)
Schmidt OG, Jin-Phillipp NY, Lange C, Denker U, Eberl K, Schreiner R, Grabeldinger H, Schweizer H, Appl. Phys. Lett., 77, 4139 (2000)
Li Q, Han SM, Brueck SRJ, Hersee S, Jiang YB, Xu H, Appl. Phys. Lett., 83, 5032 (2003)
Austin MD, Ge H, Wu W, Li M, Yu Z, Wasserman D, Lyon SA, Chou SY, Appl. Phys. Lett., 84, 5299 (2004)
Chik H, Liang J, Cloutier SG, Kouklin N, Xu JM, Appl. Phys. Lett., 84, 3376 (2004)
Hu W, Gong D, Chen Z, Yuan L, Saito K, Grimes CA, Kichambare P, Appl. Phys. Lett., 79, 3083 (2001)
Hu W, Yuan L, Chen Z, Gong D, Satio K, J. Nanosci. Nanotech., 2, 1 (2002)
Jeong SH, Lee KH, Synth. Metals, 139, 385 (2003)
Hwang SK, Jeong SH, Hwang HY, Lee OJ, Lee KH, Korean J. Chem. Eng., 19(3), 467 (2002)
Virk RS, Study of Voltage, Acid Concentration, and Temperature on Nanopore Attributes of Anodized Aluminum (San Jose State Univ. San Jose, 2005) pp.3-4
Parkhutik VP, Shershulsky VI, J. Phys. D: Appl. Phys., 25, 258 (1992)
