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- In relation to this article, we declare that there is no conflict of interest.
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Received March 4, 2009
Accepted May 20, 2009
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Study on electrochemical mechanical polishing process of copper circuit on PCB
School of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Korea 1Central R&D Institute, Samsung Electro-Mechanics Co., Ltd., Suwon 443-743, Korea
chchung@skku.edu
Korean Journal of Chemical Engineering, January 2010, 27(1), 310-314(5), 10.1007/s11814-009-0289-1
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Abstract
As an alternative to conventional chemical mechanical polishing (CMP) for the planarization of copper layers on electronic circuits, the electrochemical mechanical polishing (ECMP) process in alkali-based solution was investigated in this work. The influence of the polishing pad materials on the polishing process was studied, and the hard polyurethane polishing pad was shown to eliminate the “dishing effect”. The polishing conditions, such as the pad rotating speed, concentration of H2O2, and the amount of BTA additives were optimized to control the planarization performance. As a result, good planarization uniformity was obtained not only in small scale (30 μm) trenches but also in very large scale (a few mm) patterns with a single step ECMP process.
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Stavreva Z, Zeidler D, Plotner M, Grasshoff G, Drescher K, Microelectronic Engineering, 33, 219 (1997)
Stavreva Z, Zeidler D, Plotner M, Drescher K, Applied Surface Science, 108, 39 (1997)
Stavreva Z, Zeidler D, Plotner M, Drescher K, Microelectronic Engineering, 37-38, 143 (1997)
Ernur D, Kondo S, Shamiryan D, Maex K, Microelectronic Engineering, 64, 117 (2002)
Xu G, Liang H, Journal of Electronic Materials, 31, 272 (2002)
Tsai TH, Yen SC, Appl. Surf. Sci., 210(3-4), 190 (2003)
Noh K, Saka N, Chun JH, CIRP Annals - Manufacturing Technology, 53, 463 (2004)
Nguyen VH, Daamen R, Hoofman R, Microelectronic Engineering, 76, 95 (2004)
Du T, Vijayakumar A, Desai V, Electrochim. Acta, 49(25), 4505 (2004)
Bernard P, Kapsa P, Coude T, Abry JC, Wear,, 259, 1367 (2005)
Chen KW, Wang YL, Liu CP, Chang L, Li FY, Thin Solid Films, 498(1-2), 50 (2006)
Che W, Bastawros A, Chandra A, Lonardo PM, CIRP Annals -Manufacturing Technology, 55, 605 (2006)
Wang Y, Zhao Y, Appl. Surf. Sci., 254(5), 1517 (2007)
Prasad YN, Ramanathan S, Electrochim. Acta, 52(22), 6353 (2007)
Lee H, Park B, Jeong H, Microelectronic Engineering, 85, 698 (2008)
Goonetilleke PC, Roy D, Mater. Chem. Phys., 94(2-3), 388 (2005)
Goonetilleke PC, Roy D, Appl. Surf. Sci., 254(9), 2696 (2008)
Oh YJ, Park GS, Chung CH, J. Electrochem. Soc., 153(7), G617 (2006)
Sato S, Yasuda Z, Ishihara M, Komai N, Ohtorii H, Yoshio A, Segawa Y, Horikoshi H, Ohoka Y, Tai K, Takahashi S, Nogami, T, in Electron Devices Meeting, 2001. IEDM Technical Digest. International, 441 (2001)
Pourbaix MJN, Atlas of electrochemical equilibria in aqueous solutions, Pergamon Press, Oxford (1966)
Luo Q, Campbell DR, Babu SV, Thin Solid Films, 311(1-2), 177 (1997)
Oh YJ, Chung CH, Thin Solid Films, 515(4), 2137 (2006)
