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- In relation to this article, we declare that there is no conflict of interest.
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Received August 17, 2009
Accepted November 24, 2009
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Copyright © KIChE. All rights reserved.
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Optical characterizations of GaN nanorods fabricated by natural lithography
Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
Korean Journal of Chemical Engineering, February 2010, 27(2), 693-696(4), 10.1007/s11814-010-0107-9
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Abstract
We fabricated GaN/Sapphire nanorods by nanosphere lithography (NSL) using SiO2 nanospheres. Arrays of SiO2 nanospheres were packed on GaN, followed by dry-etching via inductively coupled plasma (ICP) etching. SiO2 nanospheres served as the etching mask under our etching conditions. Finally, a sapphire substrate under GaN was exposed by dry-etching. A significant blue shift was observed in the room temperature photoluminescence (PL) spectrum_x000D_
from GaN/Sapphire nanorods when the underlying Al2O3 was exposed. GaN nanorods were fabricated by simple and reproducible methods, where SiO2 nanospheres were successfully used as the etching mask. In addition, a blueshift in PL by the band-filling effect was observed due to the GaN nanostructures.
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