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Received June 10, 2011
Accepted August 20, 2011
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Effects of nitrogen flow rate on titanium nitride films deposition by DC facing target sputtering method
School of Chemical Engineering, Yeungnam University, Gyeongsan 712-749, Korea
Korean Journal of Chemical Engineering, May 2012, 29(5), 676-679(4), 10.1007/s11814-011-0219-x
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Abstract
TiN films were deposited onto a glass substrate by DC facing target sputtering, and the effects of N2 flow rate on the film properties were investigated. Prepared TiN films had a rock salt (NaCl-type) structure with a very low resistivity (~30 μΩ·cm) and gold-like color. Increase in the N2 flow rate played an important role in controlling the properties of TiN films, such as Ti/N ratio and growth orientation. The growth orientation changed from a (111) phase to (200), with the ratio of N/Ti becoming near stoichiometric. The change in the growth orientation was caused by the_x000D_
increase in the N2 flow rate, which weakens the kinetic energy of the bombarding particles. The observed phenomenon is explained by an energy loss in the reactive plasma due to the difference in the inner degree of freedom of the molecular gas causing the reduction in the effective energy for radicals.
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Barret C, Massalski TB, Structure of Metals, Pergamon, Oxford (1980)
Valero JAMD, Le Petitcorps Y, Manaud JP, Chollon G, Romo FJC, Lopez A, J. Vac. Sci. Technol. A, 23(3), 394 (2005)
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Kim NY, Son YB, Oh JH, Hwangbo CK, Park MC, Surf.and Coat. Technol., 128-129, 156 (2000)
Forouhi AR, Bloomer I, Phys. Rev. B., 38, 1865 (1988)
