By using silicon wafer, penetrable to the infrared beam, the i.r. spectra of silica and solid samples were measured, and this method was proved to be advantageous than the conventional methods.
The silicon wafer was thermally stable below 800℃, and not significantly oxidized below the temperature. The silicon wafer technique for the gas adsorption studies had advantages on getting sharper absorptions of the brittle mineral samples and the efflorescent samples which were unable to be self-supported. Besides, this technique was effectively applicable to the samples such as cupric sulfate which easily react with KBr.