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Received May 27, 2013
Accepted September 16, 2013
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching
1MicroNano System Research Center, Information Engineering College, Taiyuan University of Technology, Taiyuan, Shanxi, China 2Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan, Shanxi, China
Korean Journal of Chemical Engineering, January 2014, 31(1), 62-67(6), 10.1007/s11814-013-0180-y
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Abstract
We present a facile method to fabricate one-dimensional Si nanostructures based on Ag-induced selective etching of silicon wafers. To obtain evenly distributed Si nanowires (SiNWs), the fabrication parameters have been optimized. As a result, a maximum of average growth rate of 0.15 μm/min could be reached. Then, the fabricated samples were characterized by water contact angle (CA) experiments. As expected, the as-etched silicon samples exhibited a contact angle in the range of 132°-136.5°, whereas a higher contact angle (145°) could be obtained by chemical modification of the SiNWs with octadecyltrichlorosilane (OTS). Additionally, Raman spectra experiments have been carried out on as-prepared nanostructures, showing a typical decreasing from 520.9 cm^(-1) to 512.4 cm^(-1) and an asymmetric broadening, which might be associated with the phonon quantum confinement effect of Si nanostructures.
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Peng KO, Wang X, Wu XL, Lee ST, Nano Lett., 9(11), 3704 (2009)
Qu Y, Liao L, Li Y, Zhang H, Huang Y, Duan X, Nano Lett., 9(12), 4539 (2009)
Sivakov V, Andra G, Gawlik A, Berger A, Plentz J, Falk F, Christiansen SH, Nano Lett., 9(4), 1549 (2009)
Yao Y, McDowell MT, Ryu I, Wu H, Liu N, Hu L, Nix WD, Cui Y, Nano Lett., 11(7), 2949 (2011)
Ge M, Rong J, Fang X, Zhou C, Nano Lett., 12(5), 2318 (2012)
Chen K, Li BR, Chen Y, Nantod., 6(2), 131 (2011)
Hakim MMA, Lombardini M, Sun K, Giustiniano F, Roach PL, Davies DE, Howarth PH, Planque MRR, Morgan H, Ashburn P, Nano Lett., 12(4), 1868 (2012)
Ria E, Liu XM, Ross CA, Adeyeye AO, Choi WK, J.Appl. Phys., 112(2), 024312 (2012)
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Pan H, Lim S, Poh C, Sun H, Wu X, Feng Y, Lin J, Nanotechnology., 16, 417 (2005)
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Heitsch AT, Fanfair DD, Tuan HY, Korgel BA, J. Am. Chem. Soc., 130(16), 5436 (2008)
Morton KJ, Nieberg G, Bai SF, Chou SY, Nanotechnology., 19, 345301 (2008)
Tong HD, Chen S, van der Wiel WG, Carlen ET, van den Berg A, Nano Lett., 9(3), 1015 (2009)
Connor ST, Tang MX, Cui Y, Appl. Phys. Lett., 93(13), 133109 (2008)
Peng KQ, Yan YJ, Gao SP, Zhu J, Adv. Mater., 14(16), 1164 (2002)
Zhang ML, Peng KQ, Fan X, Jie JS, Zhang RQ, Lee ST, Wong NB, J. Phys. Chem. C., 112(12), 4444 (2008)
Chen H, Wang H, Zhang XH, Lee CS, Lee ST, Nano Lett., 10(3), 864 (2010)
Nassiopoulou AG, Gianneta V, Katsogridakis C, Nanoscale Res. Lett., 6, 597 (2011)
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Peng KQ, Hu JJ, Yan YJ, Wu Y, Fang H, Xu Y, Lee ST, Zhu J, Adv. Funct. Mater., 16(3), 387 (2006)
Huang ZP, Fang H, Zhu J, Adv. Mater., 19(5), 744 (2007)
Peng KQ, Wang X, Wu XL, Lee ST, Appl. Phys. Lett., 95(14), 143119 (2009)
Pan CF, Luo ZX, Xu C, Luo J, Liang RR, Zhu G, Wu WZ, Guo WX, Yan XX, Xu J, Wang ZL, Zhu J, ACS Nano., 5(8), 6629 (2011)
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Huang XJ, Lee JH, Lee JW, Yoon JB, Choi YK, Small., 4(2), 211 (2008)
Shi F, Song YY, Niu J, Xia XH, Wang ZQ, Zhang X, Chem. Mater., 18(5), 1365 (2006)
Li BB, Yu DP, Zhang SL, Phys. Rev. B., 59(3), 1645 (1999)
Li C, Fang G, Sheng S, Chen Z, Wang J, Ma S, Zhao X, Physica E., 30(1-2), 169 (2005)
Adu KW, Gutierrez HR, Kim UJ, Eklund PC, Phys. Rev.B., 73(15), 15533 (2006)
Gupta R, Xiong Q, Adu CK, Kim UJ, Eklund PC, Nano Lett., 3(5), 627 (2003)
