Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received May 24, 2014
Accepted April 6, 2015
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright © KIChE. All rights reserved.
All issues
Study and characterization of W/Si and W/B4C multilayer for applications in hard X-rays mirror
1Research Center, Hanwha L&C, Sinseong-dong, Yuseong-gu, Daejeon 305-804, Korea 2Department of Chemical Engineering, Chungbuk National University, 52, Naesudong-ro, Heungduk-gu, Cheongju, Chungbuk 362-763, Korea 3, Korea
nabk@chungbuk.ac.kr
Korean Journal of Chemical Engineering, October 2015, 32(10), 2124-2132(9), 10.1007/s11814-015-0068-0
Download PDF
Abstract
Multilayer thin films with 2.3 nm-7.6 nm of d-spacing were deposited on fusion glass and float glass substrates by magnetron sputtering. Multilayer thin film with a lower interface roughness was deposited at an abnormal discharge region of I-V characteristic curve in DC glow discharge, compared to normal discharge region. Interface roughness of periodical multilayer in general depends on layer thickness, but in this study interface roughness was controlled by adjusting deposition conditions regardless of layer thickness. But interface roughness and X-ray reflectivity (XRR) of multilayer react sensitively to surface roughness of substrate. Multilayer thin film with 2.3 nm d-spacing shoes 42% of characteristic X-ray reflectivity(Cu Kα, λ=~0.154 nm), while 3.6 nm d-spacing shows 80% of reflectivity. XRR, transmission electron microscope (TEM) and atomic force microscopy (AFM) were used to analyze the interface roughness (σ), surface roughness and d-spacing.
References
Spiller E, Appl. Phys. Lett., 20, 365 (1972)
Jang Y, Park S, Char K, Korean J. Chem. Eng., 28(5), 1149 (2011)
Cho J, Kim S, Char K, Korean J. Chem. Eng., 20(1), 174 (2003)
Chao W, Harteneck BD, Liddle JA, Anderson EH, Attwood DT, Nature, 435, 1210 (2005)
Kang HC, Yan H, Winarski RP, Holt MV, Maser J, Liu C, Conley R, Vogt S, Macrander AT, Stephenson GB, Appl. Phys. Lett., 92, 221114 (2008)
Michaelsen C, Wiesmann J, Hoffmann C, Wulf K, Brugemann L, Proc. SPIE, 4782, 143 (2002)
Schuster MR, Goebel H, Bruegemann L, Bahr D, Burgaezy F, Michaelsen C, Stoermer M, Ricardo P, Dietsch R, Holz T, Mai H, Proc. SPIE, 3767, 183 (1999)
Park YS, Han SJ, Chae JY, Kim CK, Chon KS, Proc. SPIE, 7258, 72583L (2009)
Jensen CP, Madsen KK, Christensen FE, Exp. Astron., 20, 93 (2005)
Cotroneo V, Bruni R, Gorenstein P, Pareschi G, Romaine S, Proc. SPIE, 7437, 74371Q (2009)
Salditt T, Lott D, Metzger TH, Peisl J, Vignaud G, Hoghoj P, Scharpf O, Hinze P, Lauer R, Phys. Rev. B, 54, 5860 (1996)
Fullerton EE, Pearson J, Sawers CH, Bader SD, Wu XZ, Sinha SK, Phys. Rev. B, 48, 17 (1993)
Vernon SP, Stearns DG, Rosen RS, Appl. Opt., 32, 6969 (1993)
Thompson AC, Kirz J, Attwood DT, Gullikson EM, Howells MR, Kortright JB, Liu Y, Robinson AL, X-ray data booklet, 3rd Ed., Lawrence Berkeley National Laboratory, Berkeley, California (2009).
Braun C, Parratt32 Fitting routine for reflectivity data, HMI, Berlin (1997).
Parratt LG, Phys. Rev., 95(2), 359 (1954)
Bahr D, Press W, Phys. Rev. B, 47, 4385 (1993)
Nevot L, Croce P, Rev. Phys. Appl., 15, 761 (1980)
SinhaSK, Sirota EB, Garoff S, Phys. Rev., 38, 2297 (1988)
Grill A, Cold Plasma in Materials Fabrication: From Fundamentals to Applications, Wiley, New York (1994).
Chladek M, Valvoda V, Dorner C, Holy C, Grim J, Appl. Phys. Lett., 69, 1318 (1996)
Holy V, Kubema J, van den Hoogenhof WW, Vavra I, Appl. Phys. A-Mater. Sci. Process., 60, 93 (1995)
Elliot GS, Gromko AD, Veegaete FV, Johnson CD, Johnson DC, Phys. Rev. B, 58, 8805 (1998)
Voorma HJ, Louis E, Koster NB, Bijkerk F, J. Appl. Phys., 83, 4700 (1998)
Stearns MB, Chang CH, Stearns DG, J. Appl. Phys., 71, 187 (1992)
Windt DL, Hull R, Waskiewick WK, J. Appl. Phys., 71, 2675 (1992)
Paul A, Lodha GS, Phys. Rev. B, 65, 245416 (2002)
Windt DL, Donguy S, Hailey CJ, Koglin J, Honkimaki V, Ziegler E, Christensen FE, Chen CMH, Harrison FA, Craig WW, Proc. SPIE, 4851, 639 (2003)
Jang Y, Park S, Char K, Korean J. Chem. Eng., 28(5), 1149 (2011)
Cho J, Kim S, Char K, Korean J. Chem. Eng., 20(1), 174 (2003)
Chao W, Harteneck BD, Liddle JA, Anderson EH, Attwood DT, Nature, 435, 1210 (2005)
Kang HC, Yan H, Winarski RP, Holt MV, Maser J, Liu C, Conley R, Vogt S, Macrander AT, Stephenson GB, Appl. Phys. Lett., 92, 221114 (2008)
Michaelsen C, Wiesmann J, Hoffmann C, Wulf K, Brugemann L, Proc. SPIE, 4782, 143 (2002)
Schuster MR, Goebel H, Bruegemann L, Bahr D, Burgaezy F, Michaelsen C, Stoermer M, Ricardo P, Dietsch R, Holz T, Mai H, Proc. SPIE, 3767, 183 (1999)
Park YS, Han SJ, Chae JY, Kim CK, Chon KS, Proc. SPIE, 7258, 72583L (2009)
Jensen CP, Madsen KK, Christensen FE, Exp. Astron., 20, 93 (2005)
Cotroneo V, Bruni R, Gorenstein P, Pareschi G, Romaine S, Proc. SPIE, 7437, 74371Q (2009)
Salditt T, Lott D, Metzger TH, Peisl J, Vignaud G, Hoghoj P, Scharpf O, Hinze P, Lauer R, Phys. Rev. B, 54, 5860 (1996)
Fullerton EE, Pearson J, Sawers CH, Bader SD, Wu XZ, Sinha SK, Phys. Rev. B, 48, 17 (1993)
Vernon SP, Stearns DG, Rosen RS, Appl. Opt., 32, 6969 (1993)
Thompson AC, Kirz J, Attwood DT, Gullikson EM, Howells MR, Kortright JB, Liu Y, Robinson AL, X-ray data booklet, 3rd Ed., Lawrence Berkeley National Laboratory, Berkeley, California (2009).
Braun C, Parratt32 Fitting routine for reflectivity data, HMI, Berlin (1997).
Parratt LG, Phys. Rev., 95(2), 359 (1954)
Bahr D, Press W, Phys. Rev. B, 47, 4385 (1993)
Nevot L, Croce P, Rev. Phys. Appl., 15, 761 (1980)
SinhaSK, Sirota EB, Garoff S, Phys. Rev., 38, 2297 (1988)
Grill A, Cold Plasma in Materials Fabrication: From Fundamentals to Applications, Wiley, New York (1994).
Chladek M, Valvoda V, Dorner C, Holy C, Grim J, Appl. Phys. Lett., 69, 1318 (1996)
Holy V, Kubema J, van den Hoogenhof WW, Vavra I, Appl. Phys. A-Mater. Sci. Process., 60, 93 (1995)
Elliot GS, Gromko AD, Veegaete FV, Johnson CD, Johnson DC, Phys. Rev. B, 58, 8805 (1998)
Voorma HJ, Louis E, Koster NB, Bijkerk F, J. Appl. Phys., 83, 4700 (1998)
Stearns MB, Chang CH, Stearns DG, J. Appl. Phys., 71, 187 (1992)
Windt DL, Hull R, Waskiewick WK, J. Appl. Phys., 71, 2675 (1992)
Paul A, Lodha GS, Phys. Rev. B, 65, 245416 (2002)
Windt DL, Donguy S, Hailey CJ, Koglin J, Honkimaki V, Ziegler E, Christensen FE, Chen CMH, Harrison FA, Craig WW, Proc. SPIE, 4851, 639 (2003)
