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In relation to this article, we declare that there is no conflict of interest.
Publication history
Received May 31, 2014
Accepted December 8, 2014
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Effect of chemical mechanical treatment on the optoelectronic properties in CMOS image sensor

School of Integrative Engineering, Chung-Ang University, Seoul 156-756, Korea 1Department of Physics, Chung-Ang University, Seoul 156-756, Korea 2Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
being@cau.ac.kr
Korean Journal of Chemical Engineering, February 2015, 32(2), 199-201(3), 10.1007/s11814-014-0367-x
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Abstract

This paper presents the effect focal length variation by controlling chemical mechanical polishing (CMP) processes on the CIS optical performance. White sensitivity was drastically increased, and saturation signal variation and dead zone deviation were reduced. These experimental results showed that controlled focal length was able to increase CIS optoelectronic performance.

References

Wuu SG, Chien HC, Yaung DN, Tseng CH, Wang CS, Chang CK, Hsaio YK, International Electron Devices Meeting, 551 (2001)
Hurwitz J, Smith SG, Murray AA, Denyer PB, Thomson J, Anderson S, Duncan E, Kinsey A, Paisley B, Pugibet PF, Christison E, Laffoley B, Panaghiston M, Bradshaw S, Vittu J, Brechignac R, Findlater KM, ISSCC Digest of Technical Papers, San Francisco (2001)
Jin X, Fan X, Liu Z, Kuang Z, Yang J, Microelectron. Eng., 87, 631 (2010)
Kawano S, Smith NI, Yamanaka M, Kawata S, Fujita K, Appl. Phys. Express, 042401.1, 4 (2011)
Imai T, Yagi S, Toyoda S, Miyazu J, Naganuma K, Sasaura M, Fujiura K, Appl. Phys. Express, 022501.1, 4 (2011)
Khosla RP, Microelectron. Eng., 19, 615 (1992)
Saeki A, Kozawa T, Tagwa S, Appl. Phys. Express, 075006.1, 2 (2009)
Ryuzaki D, Hoshi Y, Machii Y, Koyama N, Sakurai H, Ashizawa T, Jpn. J. Appl. Phys., 51 (2012)
Seo YJ, Kim SY, Jpn. J. Appl. Phys., 41, 6310 (2002)
Venkatesh RP, Prasad YN, Kwon TY, Kang YJ, Park JG, Jpn. J. Appl. Phys., 071301.1, 51 (2012)
Nakajima A, Noda T, Sasagawa K, Tokuda T, Ishikawa Y, Shiosaka S, Ohta J, Jpn. J. Appl. Phys., 50 (2011)
Shishido S, Noda T, Sasagawa K, Tokuda T, Ohta J, Jpn. J. Appl. Phys., 04DL01.1, 50 (2011)
Tate T, Sugawa K, Chiba K, Kotani K, Ohmi T, Jpn. J. Appl. Phys., 44, 2093 (2005)
Nakajima K, Sudo S, Aoki S, Jpn. J. Appl. Phys., 32, 5754 (1993)
Ono H, Ozaki T, Tanaka H, Kawamoto Y, Jpn. J. Appl. Phys., 30, 3621 (1991)

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